Inventor
Sheng-yao HUANG
Inventor
TW
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices37%
H10DInorganic electric semiconductor devices37%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
PatentTitleYear
12,328,898High voltage semiconductor device including buried oxide layer202512,040,396High voltage semiconductor device including buried oxide layer202412,027,629Oxide semiconductor field effect transistor202411,869,953High voltage transistor device and method for fabricating the same202411,721,702Fabrication method of fin transistor202311,631,771Oxide semiconductor field effect transistor202311,626,515High voltage semiconductor device including buried oxide layer and method for forming the same202311,476,343High voltage transistor device and method for fabricating the same202211,417,685Fin transistor structure and fabrication method thereof202211,342,465Method of forming oxide semiconductor field effect transistor2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to UNITED MICROELECTRONICS CORP (10)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 10 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 10 | 2022–2025 |