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Inventor

Ming-Fang Wang

Inventor
Taichung, TW

Overview

27→
Patents
2002–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices39%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
B60BVehicle wheels10%
C23CCoating metallic material6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B60PVehicles adapted for load transportation or to transport, to carry, or to comprise special loads or objects4%
E05DHinges or suspension devices for doors, windows or wings2%
G05BControl or regulating systems in general2%
H01LSemiconductor devices2%
H10BElectronic memory devices2%
PatentTitleYear
10,005,316Wheel disk structure20188,785,272'Process to make high-K transistor dielectrics'2014RE043673'Dual gate dielectric scheme: SiON for high performance devices and high K for low power devices'20128,012,824'Process to make high-K transistor dielectrics'20117,393,766'Process for integration of a high dielectric constant gate insulator layer in a CMOS device'20087,351,994'Noble high-k device'20087,314,255'Structure of wheel rim cover'20087,303,996'High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics'20077,271,450'Dual-gate structure and method of fabricating integrated circuits having dual-gate structures'20077,087,480'Process to make high-k transistor dielectrics'20067,071,066'Method and structure for forming high-k gates'20067,037,816'System and method for integration of HfO2 and RTCVD poly-silicon'20067,030,024'Dual-gate structure and method of fabricating integrated circuits having dual-gate structures'20067,018,879'Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing'20066,932,434'Extensional hubcap docking structure'20056,914,313'Process for integration of a high dielectric constant gate insulator layer in a CMOS device'20056,890,811'Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices'20056,834,416'Loose-leaf structure'20046,780,788'Methods for improving within-wafer uniformity of gate oxide'20046,778,879'Automated material handling system and method of use'20046,764,927'Chemical vapor deposition (CVD) method employing wetting pre-treatment'20046,712,569'Rope tie'20046,706,581'Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices'20046,702,395'Rotating wing structure of steel wheel'20046,702,396'Wheel cover having rotating wing plate'20046,656,764'Process for integration of a high dielectric constant gate insulator layer in a CMOS device'20036,455,330'Methods to create high-k dielectric gate electrodes with backside cleaning'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2014Patents assigned to TAIWAN SEMICONDUCTOR MFG (20)· patent assignee history
2002–2014Based in Taichung, TW· patent location history
2004–2008Patents assigned to KUAN HSINGS ENTPR CORP (4)· patent assignee history
2004–2014Patents assigned to WANG MING-FANG (3)· patent assignee history
2004–2018Based in Tainan, TW· patent location history
2004Based in Junghe, TW· patent location history
2006Based in Shengang Township, TW· patent location history
2012–2014Patents assigned to CHEN SHIH-CHANG (2)· patent assignee history
2012–2014Patents assigned to YAO LIANG-GI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG202002–2014
KUAN HSINGS ENTPR CORP42004–2008
WANG MING-FANGself32004–2014
CHEN SHIH-CHANG22012–2014
YAO LIANG-GI22012–2014
Locations
LocationPatentsSpan
Taichung, TW182002–2014
Tainan, TW72004–2018
Shengang Township, TW12006
Junghe, TW12004