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Inventor

Haruo Sunagawa

Inventor
Tokyo, JP

Overview

1→
Patents
2010
Patent span
Chemistry
Primary field (CPC C)

Patents· 1 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
PatentTitleYear
7,829,913'Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010Patents assigned to HITACHI CABLE (1)· patent assignee history
2010Patents assigned to NEC CORP (1)· patent assignee history
2010Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI CABLE12010
NEC CORP12010
Locations
LocationPatentsSpan
Tokyo, JP12010