Inventor
Michael W. Russell
Inventor
Norwalk, CT, US
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10BElectronic memory devices11%
C23CCoating metallic material10%
C04BLime, magnesia8%
C07CAcyclic or carbocyclic compounds8%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium8%
H01GCapacitors8%
C09GPolishing compositions5%
C23FNon-mechanical removal of metallic material from surface3%
PatentTitleYear
7,862,857'Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material'20117,705,382'Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material'20107,344,589'Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material'20087,012,292'Oxidative top electrode deposition process, and microelectronic device structure'20066,984,417'Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material'20066,699,402'Chemical mechanical polishing compositions for CMP removal of iridium thin films'20046,395,194'Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same'20026,346,741'Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same'20026,316,797'Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material'20016,184,550'Ternary nitride-carbide barrier layers'20016,100,200'Sputtering process for the conformal deposition of a metallization or insulating layer'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2011Patents assigned to ADVANCED TECH MATERIALS (11)· patent assignee history
2000–2006Based in Norwalk, CT, US· patent location history
2001–2011Based in New Milford, CT, US· patent location history
2001–2008Based in Nowalk, CT, US· patent location history
2002Patents assigned to INTERSURFACE DYNAMICS INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ADVANCED TECH MATERIALS | 11 | 2000–2011 |
| INTERSURFACE DYNAMICS INC | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Norwalk, CT, US | 5 | 2000–2006 |
| New Milford, CT, US | 3 | 2001–2011 |
| Nowalk, CT, US | 3 | 2001–2008 |