Inventor
Mitsuhiko Ueno
Inventor
Fujisawa, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices60%
H03KPulse technique20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
4,302,875'Complementary MOSFET device and method of manufacturing the same'19814,209,713'Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated'19804,168,442'CMOS FET device with abnormal current flow prevention'19794,167,747'Complementary mosfet device and method of manufacturing the same'19794,152,717'Complementary MOSFET device'19794,149,176'Complementary MOSFET device'1979Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1979–1981Patents assigned to TOKYO SHIBAURA ELECTRIC CO (6)· patent assignee history
1979–1981Based in Fujisawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO SHIBAURA ELECTRIC CO | 6 | 1979–1981 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fujisawa, JP | 6 | 1979–1981 |