Inventor
Shyh-Horng Yang
Inventor
Hsinchu, TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10BElectronic memory devices6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G06FElectric digital data processing2%
H03KPulse technique2%
PatentTitleYear
10,840,346Raised epitaxial LDD in MuGFETs and methods for forming the same202010,516,024Raised epitaxial LDD in MuGFETs and methods for forming the same201910,014,223Multi-gate devices with replaced-channels and methods for forming the same20189,941,368Raised epitaxial LDD in MuGFETs and methods for forming the same20189,634,104'FinFET and method of fabricating the same'20179,515,167'Raised epitaxial LDD in MuGFETs and methods for forming the same'20169,514,991'Method of manufacturing a FinFET device having a stepped profile'20169,431,397'Method for fabricating a multi-gate device'20169,317,647'Method of designing a circuit and system for implementing the method'20169,171,925'Multi-gate devices with replaced-channels and methods for forming the same'20159,166,053'FinFET device including a stepped profile structure'20159,166,044'Raised epitaxial LDD in MuGFETs'20159,053,934'Finfet and method of fabricating the same'20159,000,536'Fin field effect transistor having a highly doped region'20158,956,931'Method for fabricating a multi-gate device'20158,679,926'Local charge and work function engineering on MOSFET'20148,659,032'FinFET and method of fabricating the same'20148,258,587'Transistor performance with metal gate'20128,216,903'SRAM cell with asymmetrical pass gate'20128,211,773'SRAM cell with asymmetrical pass gate'20128,030,718'Local charge and work function engineering on MOSFET'20117,692,217'Matched analog CMOS transistors with extension wells'20107,435,638'Dual poly deposition and through gate oxide implants'20087,384,839'SRAM cell with asymmetrical transistors for reduced leakage'20086,956,398'Leakage current reduction method'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2012Patents assigned to TEXAS INSTRUMENTS INC (6)· patent assignee history
2005–2012Based in Plano, TX, US· patent location history
2010–2020Based in Hsinchu, TW· patent location history
2011–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (10)· patent assignee history
2012–2015Patents assigned to YANG SHYH-HORNG (6)· patent assignee history
2014–2015Patents assigned to CHEN HOU-YU (2)· patent assignee history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 10 | 2011–2016 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 9 | 2015–2020 |
| TEXAS INSTRUMENTS INC | 6 | 2005–2012 |
| YANG SHYH-HORNGself | 6 | 2012–2015 |
| CHEN HOU-YU | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 20 | 2010–2020 |
| Plano, Texas, US | 5 | 2005–2012 |