Inventor
Hajime Akiyama
Inventor
Tokyo, JP
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
G01RMeasuring electric variables14%
H01LSemiconductor devices10%
B82YSpecific uses or applications of nanostructures5%
B25BTools or bench devices not otherwise provided for, for fastening, connecting, disengaging, or holding3%
H01FMagnets2%
B08BCleaning in general1%
C10JProduction of producer gas, water-gas, synthesis gas from solid carbonaceous material, or mixtures containing these gases1%
PatentTitleYear
10,868,123SiC-SOI device and manufacturing method thereof202010,228,412Semiconductor device and method for testing same201910,228,129Waste gasification melting apparatus and waste gasification melting method using the same201910,192,797Semiconductor device and electrical contact structure thereof201910,068,814Apparatus and method for evaluating semiconductor device comprising thermal image processing20189,995,786Apparatus and method for evaluating semiconductor device20189,880,196'Semiconductor device inspection apparatus and semiconductor device inspection method'20189,678,143'Semiconductor evaluation apparatus'20179,659,795'Foreign matter removal device and foreign matter removal method'20179,551,745'Semiconductor device assessment apparatus'20179,347,988'Semiconductor testing jig and semiconductor testing method performed by using the same'20169,335,371'Semiconductor evaluating device and semiconductor evaluating method'20169,312,160'Wafer suction method, wafer suction stage, and wafer suction system'20169,257,316'Semiconductor testing jig and transfer jig for the same'20169,207,257'Inspection apparatus'20159,188,624'Inspection apparatus'20159,157,931'Probe card'20159,121,899'Semiconductor device'20159,117,656'Semiconductor cleaning device and semiconductor cleaning method'20159,117,880'Method for manufacturing semiconductor device'20158,981,805'Inspection apparatus and inspection method'20158,980,655'Test apparatus and test method'20158,975,681'Semiconductor device'20158,823,360'Semiconductor device'20148,609,443'Semiconductor device manufacturing method'20138,324,657'Semiconductor device'20128,125,045'Dielectric isolation type semiconductor device and manufacturing method therefor'20128,110,449'Semiconductor device and method of manufacturing the same'20128,071,454'Method for manufacturing dielectric isolation type semiconductor device'20117,977,787'Semiconductor device'20117,851,873'Semiconductor device and method of manufacturing the same'20107,777,279'Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage'20107,545,005'Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage'20097,485,943'Dielectric isolation type semiconductor device and manufacturing method therefor'20097,481,885'Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device'20097,417,296'Dielectric isolation type semiconductor device'20087,408,228'Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage'20087,190,034'Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage'20077,135,752'Dielectric isolation type semiconductor device and method for manufacturing the same'20067,125,780'Dielectric isolation type semiconductor device and method for manufacturing the same'20066,992,363'Dielectric separation type semiconductor device and method of manufacturing the same'20066,603,176'Power semiconductor device for power integrated circuit device'20036,307,232'Semiconductor device having lateral high breakdown voltage element'20016,246,101'Isolation structure and semiconductor device including the isolation structure'20016,163,040'Thyristor manufacturing method and thyristor'20006,049,095'Semiconductor device'20006,037,634'Semiconductor device with first and second elements formed on first and second portions'20005,994,189'High withstand voltage semiconductor device and manufacturing method thereof'19995,804,864'High withstand voltage semiconductor device and manufacturing method thereof'19985,292,672'Method of manufacturing an insulated gate bipolar transistor'19945,182,626'Insulated gate bipolar transistor and method of manufacturing the same'19935,160,985'Insulated gate bipolar transistor'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2020Patents assigned to MITSUBISHI ELECTRIC CORP (51)· patent assignee history
1992–1993Based in Itami, JP· patent location history
1994–2001Based in Hyogo, JP· patent location history
2000–2020Based in Tokyo, JP· patent location history
2010–2015Based in Chiyoda-ku, JP· patent location history
2011–2017Patents assigned to AKIYAMA HAJIME (14)· patent assignee history
2014–2017Patents assigned to OKADA AKIRA (9)· patent assignee history
2015–2016Patents assigned to YAMASHITA KINYA (6)· patent assignee history
2015–2017Patents assigned to NOGUCHI TAKAYA (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 51 | 1992–2020 |
| AKIYAMA HAJIMEself | 14 | 2011–2017 |
| OKADA AKIRA | 9 | 2014–2017 |
| YAMASHITA KINYA | 6 | 2015–2016 |
| NOGUCHI TAKAYA | 2 | 2015–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 41 | 2000–2020 |
| Hyogo, JP | 6 | 1994–2001 |
| Chiyoda-ku, JP | 3 | 2010–2015 |
| Itami, JP | 2 | 1992–1993 |