Inventor

Angus Ian Kingon

Inventor
Cary, NC, US

Overview

21→
Patents
1988–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices10%
C04BLime, magnesia9%
H10BElectronic memory devices9%
H01GCapacitors7%
B41JTypewriters6%
G11CStatic stores4%
H05KPrinted circuits4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B05DProcesses for applying fluent materials to surfaces, in general3%
PatentTitleYear
10,421,277Lead-free piezo printhead using thinned bulk material201910,399,887Method and apparatus for creating coherent bundle of scintillating fibers201910,358,376Method and apparatus for creating coherent bundle of scintillating fibers201910,252,525Lead-free piezo printhead using thinned bulk material20199,738,070'Integrated piezo printhead'20179,662,880'Integrated thin film piezoelectric printhead'20177,241,656'Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device'20077,239,026'Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip'20077,075,135'Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film'20067,074,507'Structures including perovskite dielectric layers and variable oxygen concentration gradient layers'20067,029,971'Thin film dielectrics for capacitors and methods of making thereof'20066,936,301'Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer'20056,841,080'Multi-layer conductor-dielectric oxide structure'20056,753,567'Lanthanum oxide-based dielectrics for integrated circuit capacitors'20046,541,137'Multi-layer conductor-dielectric oxide structure'20036,531,354'Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors'20035,850,089'Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories'19985,626,670'Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films'19975,555,486'Hybrid metal/metal oxide electrodes for ferroelectric capacitors'19965,017,532'Sintered ceramic product'19914,732,741'Method of making beta\"-alumina'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988Based in Pretoria, ZA· patent location history
1991–2006Based in Cary, NC, US· patent location history
1996–2006Patents assigned to UNIV NORTH CAROLINA STATE (5)· patent assignee history
1997–1998Patents assigned to AMERICAN RES CORP VIRGINIA (2)· patent assignee history
2006–2007Patents assigned to FUJITSU LTD (3)· patent assignee history
2006–2007Based in Raleigh, NC, US· patent location history
2017–2019Patents assigned to UNIV BROWN (5)· patent assignee history
2017–2019Patents assigned to XEROX CORP (4)· patent assignee history
2017–2019Based in Warren, RI, US· patent location history
2019Based in Providence, RI, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV BROWN52017–2019
UNIV NORTH CAROLINA STATE51996–2006
XEROX CORP42017–2019
FUJITSU LTD32006–2007
AMERICAN RES CORP VIRGINIA21997–1998
Locations
LocationPatentsSpan
Cary, NC, US111991–2006
Warren, RI, US42017–2019
Raleigh, NC, US32006–2007
Providence, RI, US22019
Pretoria, ZA11988