Inventor
Willy Hermansson
Inventor
Vasteras, SE
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H02Mprimary
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems16%
H02JElectric power networks11%
H03KPulse technique11%
H10DInorganic electric semiconductor devices11%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution11%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications9%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy7%
H02HEmergency protective circuit arrangements7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
8,848,322'Gate control circuit, power module and associated method'20148,847,664'Gate control circuit, power module and associated method'20148,754,543'Battery energy source arrangement and voltage source converter system'20148,654,495'Battery energy storage system with short circuit protection, and method'20148,633,614'Modular energy storage device for a high voltage electrical power system'20148,525,366'DC power source for a high voltage power apparatus'20138,310,095'Power compensator and method for providing a black start with that compensator'20128,198,750'Battery unit arrangement for high voltage applications, connector and disconnector arrangement and method'20126,524,900'Method concerning a junction barrier Schottky diode, such a diode and use thereof'20036,278,314'Electric circuit'20016,104,043'Schottky diode of SiC and a method for production thereof'20005,914,499'High voltage silicon carbide semiconductor device with bended edge'19995,879,462'Device for heat treatment of objects and a method for producing a susceptor'19995,814,546'Method for producing a bipolar semiconductor device having SiC-based epitaxial layer'19985,661,644'Converter circuit, circuitry having at least one switching device and circuit module'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2014Patents assigned to ABB RESEARCH LTD (15)· patent assignee history
1997–2001Based in Vaster.ang.s, SE· patent location history
1999–2014Based in Vasteras, SE· patent location history
2003Based in Vsters, SE· patent location history
2012–2014Patents assigned to HERMANSSON WILLY (8)· patent assignee history
2012–2014Patents assigned to HOSINI FALAH (3)· patent assignee history
2012–2014Patents assigned to RUSSBERG GUNNAR (3)· patent assignee history
2013–2014Patents assigned to DEMETRIADES GEORGIOS (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ABB RESEARCH LTD | 15 | 1997–2014 |
| HERMANSSON WILLYself | 8 | 2012–2014 |
| DEMETRIADES GEORGIOS | 3 | 2013–2014 |
| HOSINI FALAH | 3 | 2012–2014 |
| RUSSBERG GUNNAR | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Vasteras, SE | 9 | 1999–2014 |
| Vaster.ang.s, SE | 5 | 1997–2001 |
| Vsters, SE | 1 | 2003 |