Inventor
Meng-Han Lin
Inventor
Hsinchu, TW
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10BElectronic memory devices13%
G01RMeasuring electric variables2%
G11CStatic stores2%
G06FElectric digital data processing1%
PatentTitleYear
10,879,251Integrated circuit and manufacturing method thereof202010,868,027Structure and method for preventing silicide contamination during the manufacture of micro-processors with embedded flash memory202010,868,108Semiconductor device having high voltage lateral capacitor and manufacturing method thereof202010,868,026Method to improve fill-in window for embedded memory202010,861,951Transistor layout to reduce kink effect202010,804,281Anti-dishing structure for embedded memory202010,804,093Dishing prevention columns for bipolar junction transistors202010,804,220Dishing prevention columns for bipolar junction transistors202010,784,270Method to improve fill-in window for embedded memory202010,770,469Semiconductor device and method of manufacturing the same202010,741,555Metal gate modulation to improve kink effect202010,734,292Method for testing bridging in adjacent semiconductor devices and test structure202010,665,595Metal isolation testing in the context of memory cells202010,644,000Semiconductor device having deep wells202010,644,013Cell boundary structure for embedded memory202010,535,574Cell-like floating-gate test structure202010,510,855Transistor layout to reduce kink effect201910,510,685Dishing prevention columns for bipolar junction transistors201910,468,410Metal gate modulation to improve kink effect201910,276,458Method for testing bridging in adjacent semiconductor devices and test structure201910,134,644Method of manufacturing a semiconductor device having deep wells201810,049,939Semiconductor device and a method for fabricating the same20189,887,302'Schottky barrier diode'20189,847,399Semiconductor device and a method for fabricating the same20179,831,134Method of manufacturing a semiconductor device having deep wells20179,502,585'Schottky barrier diode and method of manufacturing the same'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (26)· patent assignee history
2016–2020Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 26 | 2016–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 26 | 2016–2020 |