Inventor
HSIAO-YING YANG
Inventor
TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
G05BControl or regulating systems in general5%
G06NComputing arrangements based on specific computational models5%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
Y02PClimate change mitigation technologies in the production or processing of goods5%
PatentTitleYear
12,513,924Semiconductor device202512,339,632Training method for semiconductor process prediction model, semiconductor process prediction device, and semiconductor process prediction method202511,973,021Semiconductor device and method forming the same202411,742,389Semiconductor structure and method for forming the same202311,393,921High-voltage semiconductor device202211,374,096High voltage semiconductor device202211,164,979Semiconductor device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to VANGUARD INT SEMICONDUCT CORP (6)· patent assignee history
2021–2025Based in TW· patent location history
2025Patents assigned to UNITED MICROELECTRONICS CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VANGUARD INT SEMICONDUCT CORP | 6 | 2021–2025 |
| UNITED MICROELECTRONICS CORP | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 7 | 2021–2025 |