Inventor

Masato Koyama

Inventor

Miura-gun, JP

Overview

1988–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 94 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices46%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H10BElectronic memory devices6%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems5%

H01LSemiconductor devices4%

H02PControl or regulation of electric motors, electric generators or dynamo-electric converters3%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

H10NElectric solid-state devices not otherwise provided for3%

Y02PClimate change mitigation technologies in the production or processing of goods2%

G05BControl or regulating systems in general1%

PatentTitleYear

10,983,656Image processing system and image processing method for playback of content2021 RE047640Semiconductor device2019 10,153,326Memory device2018 RE046271'Semiconductor device'2017 D0736815'Portion of display panel or screen with an icon'2015 9,112,132'Resistance-variable memory device'2015 9,076,788'Insulating film and semiconductor device including the same'2015 8,927,404'Insulating film and semiconductor device including the same'2015 8,866,342'Power converting apparatus'2014 8,658,999'Semiconductor device'2014 8,592,924'Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto'2013 8,461,006'Semiconductor device and method for manufacturing the same'2013 8,410,556'Semiconductor device'2013 8,304,304'Semiconductor device'2012 8,269,285'Semiconductor device'2012 8,263,452'Semiconductor device'2012 8,203,189'Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto'2012 8,174,080'Semiconductor device'2012 8,169,040'Semiconductor device and method for manufacturing the same'2012 8,168,499'Semiconductor device and method for manufacturing the same'2012 8,148,787'Semiconductor device and method for manufacturing the same'2012 8,129,792'Semiconductor device and method for manufacturing the same'2012 8,076,732'Semiconductor device'2011 8,053,300'Semiconductor device'2011 8,008,147'Semiconductor device and method for manufacturing the same'2011 7,986,014'Semiconductor device'2011 7,968,956'Semiconductor device'2011 7,964,489'Semiconductor device'2011 7,960,793'Semiconductor device'2011 7,943,984'Nonvolatile semiconductor memory apparatus'2011 7,898,015'Insulating film and semiconductor device using this film'2011 7,863,695'Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS'2011 7,834,408'Semiconductor device and method for manufacturing the same'2010 7,825,458'Nonvolatile semiconductor memory and manufacturing method thereof'2010 7,807,990'Semiconductor device'2010 7,804,145'Semiconductor device, capacitor, and field effect transistor'2010 7,768,077'Semiconductor device and method for manufacturing the same'2010 7,763,946'Semiconductor device and method for manufacturing the same'2010 7,755,089'Semiconductor device including complementary MOS transistor having a strained Si channel'2010 7,745,888'Method of making p-channel and n-channel MIS transistors using single film formation of TaC'2010 7,737,503'Semiconductor device and method for manufacturing the same'2010 7,728,394'Semiconductor device and manufacturing method thereof'2010 7,727,832'Semiconductor device and method for manufacturing the same'2010 7,718,521'Semiconductor device and method for manufacturing the same'2010 7,667,273'Semiconductor device and method for manufacturing the same'2010 7,646,072'Semiconductor device and method for manufacturing the same'2010 7,632,728'Method of forming TaC gate electrodes with crystal orientation ratio defining the work function'2009 7,612,413'Semiconductor device and manufacturing method thereof'2009 7,608,849'Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements'2009 7,608,896'Semiconductor device'2009 7,601,623'Method of manufacturing a semiconductor device with a gate electrode having a laminate structure'2009 7,576,397'Semiconductor device'2009 7,573,065'Semiconductor device evaluation method'2009 7,569,891'Semiconductor device with reduced contact resistance and method for manufacturing the same'2009 7,563,678'Semiconductor device and method of manufacturing the same'2009 7,541,657'Semiconductor device and method for manufacturing the same'2009 7,498,643'Semiconductor device and method for manufacturing the same'2009 7,485,936'Semiconductor device and method of manufacturing the same'2009 7,435,655'Semiconductor device and method for manufacturing the same'2008 7,432,570'Semiconductor device and manufacturing method thereof'2008 7,429,776'Semiconductor device and method for manufacturing the same'2008 7,429,777'Semiconductor device with a gate electrode having a laminate structure'2008 7,416,967'Semiconductor device, and method for manufacturing the same'2008 7,410,855'Semiconductor device'2008 7,391,085'Semiconductor device'2008 7,348,644'Semiconductor device and method of manufacturing semiconductor device'2008 7,300,838'Semiconductor device and method of manufacturing semiconductor device'2007 7,205,618'Semiconductor device and method for manufacturing the same'2007 7,122,470'Semiconductor device with a CMOS transistor'2006 7,087,969'Complementary field effect transistor and its manufacturing method'2006 7,078,330'Metal electrode and bonding method using the metal electrode'2006 7,075,158'Semiconductor device and method of manufacturing the same'2006 7,053,455'Semiconductor device and method of manufacturing semiconductor device'2006 6,982,467'Semiconductor device and method of manufacturing the same'2006 6,864,663'Hybrid vehicle power control apparatus and hybrid construction equipment using the power control apparatus'2005 6,849,908'Semiconductor device and method of manufacturing the same'2005 6,803,635'MIS field effect transistor with metal oxynitride film'2004 6,613,658'MIS field effect transistor and method of manufacturing the same'2003 6,602,753'Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the same'2003 6,194,864'Control device for induction motor'2001 6,104,530'Transparent laminates and optical filters for displays using same'2000 6,088,246'Method of and device for controlling pulse width modulation inverter'2000 5,911,899'Corrosion-proof transparent heater panels and preparation process thereof'1999 5,432,422'Method and apparatus for controlling the positioning and reducing vibration in a machine tool system'1995 5,428,285'Position controller for controlling an electric motor'1995 5,355,297'Three-level three-phase inverter apparatus'1994 5,267,136'DC-DC converter having parallel converter circuits'1993 5,264,773'Controller for induction motor'1993 5,248,348'Amorphous silicon solar cell and method for manufacturing the same'1993 5,247,237'Control device of induction motor'1993 5,194,398'Semiconductor film and process for its production'1993 5,189,603'DC to AC electric power converting apparatus'1993 5,159,539'High frequency DC/AC power converting apparatus'1992 4,780,658'Control system for induction motor'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2014Patents assigned to MITSUBISHI ELECTRIC CORP (14)· patent assignee history

1988–1995Based in Hyogo, JP· patent location history

1992–1993Based in Amagasaki, JP· patent location history

2000–2021Based in Tokyo, JP· patent location history

2003–2019Patents assigned to TOSHIBA KK (73)· patent assignee history

2003–2015Based in Miura-gun, JP· patent location history

2005–2015Based in Kanagawa, JP· patent location history

2011–2015Patents assigned to KOYAMA MASATO (17)· patent assignee history

2011–2013Patents assigned to ICHIHARA REIKA (7)· patent assignee history

2012–2013Patents assigned to TSUCHIYA YOSHINORI (10)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	73	2003–2019
KOYAMA MASATOself	17	2011–2015
MITSUBISHI ELECTRIC CORP	14	1988–2014
TSUCHIYA YOSHINORI	10	2012–2013
ICHIHARA REIKA	7	2011–2013

Locations

Location	Patents	Span
Miura-gun, JP	38	2003–2015
Kanagawa, JP	32	2005–2015
Tokyo, JP	6	2000–2021
Hyogo, JP	5	1988–1995
Amagasaki, JP	4	1992–1993