Inventor

Chang-Wook Jeong

Inventor

Seoul, KR

Overview

2003–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary

H10NElectric solid-state devices not otherwise provided for20%

A61BDiagnosis15%

G11CStatic stores15%

H10BElectronic memory devices13%

H10DInorganic electric semiconductor devices11%

B25JManipulators4%

H01LSemiconductor devices4%

A61MDevices for introducing media into, or onto, the body3%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

PatentTitleYear

10,714,473Semiconductor device2020 10,674,924Mapping cavernous nerves during surgery2020 10,504,894Semiconductor device2019 10,194,891Minimally invasive surgical instrument having articulation immobilising structure2019 10,166,075Minimally invasive surgical instrument implementing a motor2019 10,010,310Minimally invasive surgical instrument2018 10,010,375Surgical robot system for realizing single-port surgery and multi-port surgery and method for controlling same2018 9,968,343Minimally invasive surgical instrument having a bent shaft2018 9,833,290Minimally invasive surgical instrument2017 9,466,703'Method for fabricating semiconductor device'2016 9,463,040'Device for fixing joint structure'2016 9,241,727'Tool for minimally invasive surgery and method for using the same'2016 9,089,352'Surgical robot system having tool for minimally invasive surgery'2015 8,801,731'Tool for minimally invasive surgery'2014 8,119,478'Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same'2012 8,049,201'Semiconductor memory device and method of manufacturing the same'2011 8,026,543'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'2011 7,974,115'One-time programmable devices including chalcogenide material and electronic systems including the same'2011 7,889,548'Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device'2011 7,778,079'Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices'2010 7,701,749'Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices'2010 7,667,998'Phase change memory device and method of forming the same'2010 7,656,694'Methods of programming one-time programmable devices including chalcogenide material'2010 7,612,360'Non-volatile memory devices having cell diodes'2009 7,606,064'Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device'2009 7,569,401'Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same'2009 7,521,281'Methods of forming phase-changeable memory devices'2009 7,521,706'Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same'2009 7,488,981'Memory devices having sharp-tipped phase change layer patterns'2009 7,482,616'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'2009 7,440,308'Phase-change random access memory device and method of operating the same'2008 7,411,208'Phase-change memory device having a barrier layer and manufacturing method'2008 7,105,870'Phase-changeable memory devices'2006 7,092,283'Magnetic random access memory devices including heat generating layers and related methods'2006 6,635,571'Process for forming aluminum or aluminum oxide thin film on substrates'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2020Based in Seoul, KR· patent location history

2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (23)· patent assignee history

2010Based in Seocho-gu, KR· patent location history

2012Patents assigned to JEONG CHANG-WOOK (1)· patent assignee history

2014–2020Patents assigned to JEONG CHANG WOOK (10)· patent assignee history

2016–2019Patents assigned to MOVASU INC (3)· patent assignee history

2016–2020Based in Hwaseong-si, KR· patent location history

2017–2019Patents assigned to KIM HYUNG TAE (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	23	2006–2020
JEONG CHANG WOOKself	10	2014–2020
KIM HYUNG TAE	5	2017–2019
MOVASU INC	3	2016–2019
JEONG CHANG-WOOKself	1	2012

Locations

Location	Patents	Span
Seoul, KR	31	2003–2020
Hwaseong-si, KR	3	2016–2020
Seocho-gu, KR	1	2010