Inventor
Babar A. Khan
Inventor
Ossining, NY, US
Overview
Patents· 97 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices19%
H10BElectronic memory devices16%
H01LSemiconductor devices12%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein12%
H01JElectric discharge tubes or discharge lamps7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G06FElectric digital data processing4%
G09FDisplaying4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
PatentTitleYear
11,107,821Semiconductor structures with deep trench capacitor and methods of manufacture202111,056,493Semiconductor structures with deep trench capacitor and methods of manufacture202110,825,821Cooling and power delivery for a wafer level computing board202010,784,268OTP elements with high aspect ratio MTJ202010,741,752Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices202010,707,217Semiconductor structures with deep trench capacitor and methods of manufacture202010,566,524Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices202010,535,662Semiconductor structures including an integrated FinFET with deep trench capacitor and methods of manufacture202010,361,207Semiconductor structures with deep trench capacitor and methods of manufacture201910,269,806Semiconductor structures with deep trench capacitor and methods of manufacture201910,192,161Lithium-drift based resistive processing unit for accelerating machine learning training201910,050,039Semiconductor structures with deep trench capacitor and methods of manufacture201810,042,968Semiconductor structures with deep trench capacitor and methods of manufacture201810,037,998Semiconductor structures with deep trench capacitor and methods of manufacture20189,911,914'Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices'20189,741,722'Dummy gate structure for electrical isolation of a fin DRAM'20179,679,917'Semiconductor structures with deep trench capacitor and methods of manufacture'20179,576,096'Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture'20179,576,964'Integrated fin and strap structure for an access transistor of a trench capacitor'20179,570,363'Vertically integrated memory cell'20179,564,445'Dummy gate structure for electrical isolation of a fin DRAM'20179,564,444'Method of forming integrated fin and strap structure for an access transistor of a trench capacitor'20179,466,614'Vertically integrated memory cell'20169,406,683'Wet bottling process for small diameter deep trench capacitors'20169,299,769'Semiconductor-on-oxide structure and method of forming'20169,224,797'Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)'20159,064,744'Structure and method to realize conformal doping in deep trench applications'20159,059,031'DRAM with dual level word lines'20159,059,322'Semiconductor-on-insulator (SOI) deep trench capacitor'20158,987,800'Semiconductor structures with deep trench capacitor and methods of manufacture'20158,946,045'Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)'20158,928,057'Uniform finFET gate height'20158,877,603'Semiconductor-on-oxide structure and method of forming'20148,860,113'Creating deep trenches on underlying substrate'20148,779,490'DRAM with dual level word lines'20148,637,958'Structure and method for forming isolation and buried plate for trench capacitor'20148,586,444'Creating deep trenches on underlying substrate'20138,563,446'Technique to create a buried plate in embedded dynamic random access memory device'20138,298,908'Structure and method for forming isolation and buried plate for trench capacitor'20128,236,710'Technique to create a buried plate in embedded dynamic random access memory device'20127,858,485'Structure and method for manufacturing trench capacitance'20107,655,967'DRAM (dynamic random access memory) cells'20107,436,044'Electrical fuses comprising thin film transistors (TFTS), and methods for programming same'20087,294,543'DRAM (Dynamic Random Access Memory) cells'20077,256,439'Trench capacitor array having well contacting merged plate'20077,153,737'Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention'20067,078,756'Collarless trench DRAM device'20066,821,857'High on-current device for high performance embedded DRAM (eDRAM) and method of forming the same'20046,727,540'Structure and method of fabricating embedded DRAM having a vertical device array and a bordered bitline contact'20046,703,312'Method of forming active devices of different gatelengths using lithographic printed gate images of same length'20046,670,675'Deep trench body SOI contacts with epitaxial layer formation'20036,579,462'Plasma addressed liquid crystal display with glass spacers'20036,518,151'Dual layer hard mask for eDRAM gate etch process'20036,517,402'Plasma addressed liquid crystal display with etched glass spacers'20036,507,511'Secure and dense SRAM cells in EDRAM technology'20036,433,471'Plasma addressed liquid crystal display with glass spacers'20026,410,399'Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidization'20026,340,615'Method of forming a trench capacitor DRAM cell'20026,285,127'Plasma addressed liquid crystal display with etched glass spacers'20016,235,546'Method of forming an active matrix electro-optic display device with storage capacitors'20016,225,029'Plasma addressed liquid crystal display with organic-walled plasma channels'20016,057,895'Plasmas addressed liquid crystal display with deposited plasma channels with tapered edges'20006,016,032'PALC panel with wire electrodes'20006,007,399'Hollow cathodes for plasma-containing display devices and method of producing same'19995,990,531'Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made'19995,965,976'Gas discharge lamps fabricated by micromachined transparent substrates'19995,955,838'Gas discharge lamps and lasers fabricated by micromachining methodology'19995,929,463'Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same'19995,919,070'Vacuum microelectronic device and methodology for fabricating same'19995,914,562'Anodic bonded plasma addressed liquid crystal displays'19995,915,164'Methods of making high voltage GaN-A1N based semiconductor devices'19995,898,271'Hollow cathodes with an I-beam or C-beam cross section for a plasma display device'19995,868,811'Method of making a channel plate for a flat display device'19995,835,167'Plasma addressed liquid crystal display with reduced column voltages'19985,811,935'Discharge lamp with T-shaped electrodes'19985,808,413'Plasma addressed liquid crystal display with organic-walled plasma channels'19985,808,410'Flat panel light source for liquid crystal displays'19985,804,920'Plasma addressed liquid crystal display with etched glass spacers'19985,805,122'Voltage driving waveforms for plasma addressed liquid crystal displays'19985,796,209'Gas discharge lamps and lasers fabricated by michromachining'19985,764,001'Plasma addressed liquid crystal display assembled from bonded elements'19985,705,886'Cathode for plasma addressed liquid crystal display'19985,696,569'Channel configuration for plasma addressed liquid crystal display'19975,626,772'Plasma addressed liquid crystal display with etched plasma channels'19975,624,293'Gas discharge lamps and lasers fabricated by micromachining methodology'19975,598,052'Vacuum microelectronic device and methodology for fabricating same'19975,596,431'Plasma addressed liquid crystal display with etched electrodes'19975,574,327'Microlamp incorporating light collection and display functions'19965,438,343'Gas discharge displays and methodology for fabricating same by micromachining technology'19955,399,524'Method of providing an ohmic type contact on p-type Zn(S)Se'19955,354,708'Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine'19945,305,128'Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same'19945,293,074'Ohmic contact to p-type ZnSe'19945,273,931'Method of growing epitaxial layers of N-doped II-VI semiconductor compounds'19935,250,444'Rapid plasma hydrogenation process for polysilicon MOSFETs'19935,237,436'Active matrix electro-optic display device with light shielding layer and projection and color employing same'19935,227,328'Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2001Patents assigned to PHILIPS CORP (10)· patent assignee history
1993–2021Based in Ossining, NY, US· patent location history
1994–2015Patents assigned to KHAN BABAR A (8)· patent assignee history
1995–2003Patents assigned to PHILIPS ELECTRONICS NA (29)· patent assignee history
1997–2003Patents assigned to TEKTRONIX INC (5)· patent assignee history
2002–2021Patents assigned to IBM (54)· patent assignee history
2008–2014Based in Hopewell Junction, NY, US· patent location history
2018–2020Based in New York, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 54 | 2002–2021 |
| PHILIPS ELECTRONICS NA | 29 | 1995–2003 |
| PHILIPS CORP | 10 | 1993–2001 |
| KHAN BABAR Aself | 8 | 1994–2015 |
| TEKTRONIX INC | 5 | 1997–2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ossining, New York, US | 92 | 1993–2021 |
| Hopewell Junction, New York, US | 3 | 2008–2014 |
| New York, New York, US | 2 | 2018–2020 |