Inventor
Bayard K. Johnson
Inventor
St. Louis, MO, US
Overview
16→
Patents
1999–2020
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth33%
Y10TTechnical subjects covered by former us classification31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
H01LSemiconductor devices2%
Y02PClimate change mitigation technologies in the production or processing of goods2%
PatentTitleYear
10,544,517Growth of a uniformly doped silicon ingot by doping only the initial charge202010,202,705Silicon ingot having uniform multiple dopants and method and apparatus for producing same20199,051,659'Silicon single crystal doped with gallium, indium, or aluminum'20157,442,253'Process for forming low defect density, ideal oxygen precipitating silicon'20087,229,693'Low defect density, ideal oxygen precipitating silicon'20076,896,728'Process for producing low defect density, ideal oxygen precipitating silicon'20056,840,997'Vacancy, dominsated, defect-free silicon'20056,632,278'Low defect density epitaxial wafer and a process for the preparation thereof'20036,555,194'Process for producing low defect density, ideal oxygen precipitating silicon'20036,409,826'Low defect density, self-interstitial dominated silicon'20026,379,642'Vacancy dominated, defect-free silicon'20026,315,828'Continuous oxidation process for crystal pulling apparatus'20016,254,672'Low defect density self-interstitial dominated silicon'20016,190,631'Low defect density, ideal oxygen precipitating silicon'20016,039,801'Continuous oxidation process for crystal pulling apparatus'20005,919,302'Low defect density vacancy dominated silicon'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2008Patents assigned to MEMC ELECTRONIC MATERIALS (13)· patent assignee history
1999–2005Based in St. Louis, MO, US· patent location history
2003–2020Based in Jefferson Hills, PA, US· patent location history
2015–2020Patents assigned to JOHNSON BAYARD K (3)· patent assignee history
2015–2019Patents assigned to DELUCA JOHN P (2)· patent assignee history
2015–2019Patents assigned to LUTER WILLIAM L (2)· patent assignee history
2019–2020Patents assigned to GTAT IP HOLDING LLC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MEMC ELECTRONIC MATERIALS | 13 | 1999–2008 |
| JOHNSON BAYARD Kself | 3 | 2015–2020 |
| DELUCA JOHN P | 2 | 2015–2019 |
| GTAT IP HOLDING LLC | 2 | 2019–2020 |
| LUTER WILLIAM L | 2 | 2015–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| St. Louis, MO, US | 9 | 1999–2005 |
| Jefferson Hills, Pennsylvania, US | 7 | 2003–2020 |