Inventor
Riichiro Takemura
Inventor
Tokyo, JP
Overview
Patents· 134 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores40%
H10BElectronic memory devices26%
H10DInorganic electric semiconductor devices19%
H10NElectric solid-state devices not otherwise provided for6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H01LSemiconductor devices2%
H03KPulse technique2%
A61GTransport, personal conveyances, or accommodation specially adapted for patients or disabled persons1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
PatentTitleYear
10,481,125Biomolecule measuring device201910,030,266Semiconductor device and manufacturing method thereof20189,725,753'Biomolecule information analysis device'20179,318,178'Semiconductor storage device and data processing method'20169,257,483'Magnetic memory, method of manufacturing the same, and method of driving the same'20169,177,628'Semiconductor device with low voltage programming/erasing operations'20158,922,025'Semiconductor device'20148,837,209'Magnetic memory cell and magnetic random access memory'20148,837,251'Semiconductor device with low voltage programming/erasing operation'20148,750,032'Semiconductor recording device'20148,638,121'Semiconductor device'20148,587,995'Semiconductor device'20138,546,783'Semiconductor device and method of manufacturing the same'20138,427,864'Semiconductor storage device'20138,363,464'Semiconductor device'20138,319,204'Semiconductor device'20128,232,543'Semiconductor device and method of manufacturing the same'20128,228,724'Semiconductor device'20128,199,596'Semiconductor memory device having a plurality of sense amplifier circuits'20128,116,128'Semiconductor device'20128,102,695'Semiconductor device'20128,035,147'Semiconductor device'20117,995,405'Semiconductor memory device having a sense amplifier circuit with decreased offset'20117,973,582'Timing control circuit and semiconductor storage device'20117,969,765'Sense amplifier for semiconductor memory device'20117,933,141'Semiconductor memory device'20117,903,449'Semiconductor memory device'20117,903,492'Semiconductor device'20117,884,348'Semiconductor device and method of manufacturing the same'20117,876,627'Semiconductor memory device having a sense amplifier circuit with decreased offset'20117,859,889'Semiconductor memory device'20107,848,177'Semiconductor integrated circuit device'20107,843,751'Semiconductor memory device comprising sense amplifier having P-type sense amplifier and N-type sense amplifiers with different threshold voltages'20107,843,250'Semiconductor device'20107,835,171'Semiconductor memory device'20107,829,930'Semiconductor device with ion movement control'20107,821,804'Semiconductor integrated circuit'20107,804,700'Semiconductor memory device with reduced coupling noise'20107,787,290'Semiconductor device'20107,778,068'Semiconductor device'20107,772,911'Timing control circuit and semiconductor storage device'20107,759,714'Semiconductor device'20107,750,712'Timing control circuit, timing generation system, timing control method and semiconductor memory device'20107,742,330'Semiconductor device'20107,738,286'Magnetic memory device'20107,714,314'Semiconductor device and method of manufacturing the same'20107,706,208'Semiconductor memory device'20107,659,769'Semiconductor device'20107,633,833'Semiconductor memory device'20097,619,911'Semiconductor integrated circuit device'20097,613,038'Semiconductor integrated circuit device'20097,609,572'Semiconductor memory device'20097,603,592'Semiconductor device having a sense amplifier array with adjacent ECC'20097,596,014'Semiconductor device'20097,593,253'Semiconductor device'20097,586,782'Semiconductor memory'20097,574,648'Semiconductor device'20097,542,357'Semiconductor device'20097,505,299'Semiconductor memory device'20097,495,943'Semiconductor memory device'20097,492,655'Memory device having high speed sense amplifier comprising pull-up circuit and pull-down circuits with drivability for each'20097,492,644'Semiconductor integrated circuit device'20097,489,552'Semiconductor integrated circuit device'20097,489,588'Semiconductor memory device having a main amplifier equipped with a current control circuit in a burst read operation'20097,474,550'Dynamic RAM-and semiconductor device'20097,468,901'Semiconductor memory device'20087,447,091'Sense amplifier for semiconductor memory device'20087,443,718'Magnetic memory device'20087,388,768'Semiconductor device'20087,385,838'Semiconductor device with a non-erasable memory and/or a nonvolatile memory'20087,372,726'Semiconductor memory'20087,345,938'Semiconductor device'20087,336,544'Semiconductor device'20087,310,256'Semiconductor memory device'20077,304,910'Semiconductor memory device with sub-amplifiers having a variable current source'20077,289,346'Semiconductor integrated circuit'20077,274,613'Dynamic random access memory (DRAM) capable of canceling out complementary noise development in plate electrodes of memory cell capacitors'20077,262,983'Semiconductor memory'20077,257,034'Semiconductor integrated circuit device'20077,239,562'Semiconductor device'20077,230,867'Semiconductor device'20077,224,599'Semiconductor device'20077,224,629'Memory device having high speed sense amplifier comprising pull-up circuit and pull-down circuits with different drivability for each'20077,221,576'Dynamic RAM-and semiconductor device'20077,206,216'Semiconductor device with a non-erasable memory and/or a nonvolatile memory'20077,200,061'Sense amplifier for semiconductor memory device'20077,196,953'Semiconductor device using high-speed sense amplifier'20077,193,884'Semiconductor memory device'20077,184,326'Semiconductor memory'20077,173,838'Content addressable memory device'20077,154,788'Semiconductor integrated circuit device'20067,123,535'Semiconductor integrated circuit device'20067,098,478'Semiconductor memory device using vertical-channel transistors'20067,057,912'Semiconductor device'20067,038,961'Semiconductor device'20067,030,438'Semiconductor integrated circuit'20066,992,343'Semiconductor memory device'20066,990,037'Semiconductor memory'20066,943,373'Semiconductor memory device using vertical-channel transistors'20056,944,078'Semiconductor device'20056,944,080'Dynamic random access memory(DRAM) capable of canceling out complimentary noise developed in plate electrodes of memory cell capacitors'20056,925,017'Semiconductor device'20056,917,552'Semiconductor device using high-speed sense amplifier'20056,894,912'Semiconductor memory'20056,882,557'Semiconductor memory device'20056,845,028'Semiconductor memory device using open data line arrangement'20056,828,612'Semiconductor memory device'20046,819,613'Semiconductor device'20046,812,540'Semiconductor integrated circuit device'20046,809,364'Semiconductor integrated circuit device and a method of manufacture thereof'20046,807,120'Dynamic random access memory (DRAM) capable of canceling out complementary noise developed in plate electrodes of memory cell capacitors'20046,762,949'Dynamic RAM-and semiconductor device'20046,721,194'Semiconductor memory'20046,717,835'Semiconductor device'20046,670,642'Semiconductor memory device using vertical-channel transistors'20036,671,198'Semiconductor device'20036,671,217'Semiconductor device using high-speed sense amplifier'20036,639,822'Dynamic ram-and semiconductor device'20036,625,051'Semiconductor integrated circuit'20036,621,110'Semiconductor intergrated circuit device and a method of manufacture thereof'20036,545,897'Dynamic RAM-and semiconductor device'20036,538,945'Sense amplifiers having reduced Vth deviation'20036,538,912'Semiconductor device'20036,535,415'Semiconductor device'20036,501,672'Dynamic random access memory (DRAM) capable of canceling out complementary noise developed in plate electrodes of memory cell capacitors'20026,477,100'Semiconductor memory device with over-driving sense amplifier'20026,459,627'Semiconductor memory device'20026,426,889'Semiconductor integrated circuit'20026,400,596'Semiconductor memory device using open data line arrangement'20026,373,776'Dynamic ram and semiconductor device'20026,370,054'Dynamic RAM and semiconductor device'20026,341,088'Dynamic random access memory in switch MOSFETs between sense amplifiers and bit lines'20026,278,628'Semiconductor integrated circuit'20016,212,110'Semiconductor memory device'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2018Patents assigned to HITACHI LTD (74)· patent assignee history
2001–2019Based in Tokyo, JP· patent location history
2001–2002Based in Kokubunji, JP· patent location history
2003–2010Patents assigned to RENESAS TECH CORP (26)· patent assignee history
2004–2014Patents assigned to ELPIDA MEMORY INC (34)· patent assignee history
2010–2011Based in Los Angeles, CA, US· patent location history
2010Based in Angels Camp, CA, US· patent location history
2011Based in Chiyoda-ku, JP· patent location history
2012–2017Patents assigned to TAKEMURA RIICHIRO (17)· patent assignee history
2012–2017Patents assigned to KAWAHARA TAKAYUKI (11)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 74 | 2001–2018 |
| ELPIDA MEMORY INC | 34 | 2004–2014 |
| RENESAS TECH CORP | 26 | 2003–2010 |
| TAKEMURA RIICHIROself | 17 | 2012–2017 |
| KAWAHARA TAKAYUKI | 11 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 121 | 2001–2019 |
| Los Angeles, California, US | 7 | 2010–2011 |
| Kokubunji, JP | 2 | 2001–2002 |
| Chiyoda-ku, JP | 1 | 2011 |
| Angels Camp, California, US | 1 | 2010 |