Inventor
Guan-Jie Shen
Inventor
Hsinchu, TW
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices32%
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
PatentTitleYear
10,777,664Epitaxy source/drain regions of FinFETs and method forming same202010,763,280Hybrid FinFET structure202010,665,686Gate feature in finFET device202010,276,680Gate feature in FinFET device201910,141,431Epitaxy source/drain regions of FinFETs and method forming same201810,115,596Method of fabricating a semiconductor device having a T-shape in the metal gate line-end20189,978,640Method of fabricating a semiconductor device with reduced leak paths20189,780,213'Semiconductor device having a reversed T-shaped profile in the metal gate line-end'20179,330,967'Method of fabricating a semiconductor device with reduced leak paths'20166,602,747'Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2003Based in Hualien County, TW· patent location history
2016–2020Based in Hsinchu, TW· patent location history
2017–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 8 | 2017–2020 |
| TAIWAN SEMICONDUCTOR MFG | 2 | 2003–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 9 | 2016–2020 |
| Hualien County, TW | 1 | 2003 |