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Inventor

Liang-Yuh Chen

Inventor
Foster City, CA, US

Overview

127→
Patents
1991–2021
Patent span
Performing operations
Primary field (CPC B)

Patents· 127 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
B24BMachines, devices, or processes for grinding or polishing12%
B23HWorking of metal by the action of a high concentration of electric current on a workpiece using an electrode which takes the place of a tool12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
C23CCoating metallic material5%
C25DProcesses for the electrolytic or electrophoretic production of coatings5%
C25FProcesses for the electrolytic removal of materials from objects4%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
C09GPolishing compositions3%
Y02PClimate change mitigation technologies in the production or processing of goods2%
PatentTitleYear
11,088,856Memory storage system, host system authentication method and memory storage device2021D0924873USB hub202110,758,883Fluid catalytic cracking process and apparatus for maximizing light olefin yield and other applications202010,696,907Fluid catalytic cracking process and apparatus for maximizing light olefin yield and other applications202010,576,440Method of preparing a material of a battery cell202010,544,092Malononitrile oxime ether compound and use thereof202010,537,826Structured packing for catalytic distillation202010,507,446Method of preparing a material of a battery cell201910,506,085Electronic product metal shell having antenna groove201910,450,514Process and apparatus for enhanced removal of contaminants in fluid catalytic cracking processes201910,351,786Fluid catalytic cracking process and apparatus for maximizing light olefin yield and other applications201910,194,547Electronic product metal shell with an antenna groove and method of manufacturing the same201910,076,737Method for preparing a material of a battery cell20189,976,011Polymer composites and fabrications thereof20189,861,969'Binderless molecular sieve catalyst and a preparation method thereof'20189,809,895'Method of preparing aluminum alloy resin composite and aluminum alloy-resin composite obtainable by the same'20179,802,388'Aluminum alloy resin composite and method of preparing the same'20179,783,894'Metal composite and method of preparing the same, metal-resin composite and method of preparing the same'20179,637,835'Metal composite and method of preparing the same'20179,480,975'Catalyst for catalytic cracking in a fluidized bed'20169,394,487'Multi-stage biomass conversion'20168,653,281'Process for the manufacture of agomelatine and its intermediate'20148,449,950'In-situ deposition of battery active lithium materials by plasma spraying'20138,420,704'Nano-structured polymer composites and process for preparing same'20138,399,065'In-situ deposition of battery active lithium materials by thermal spraying'20138,216,379'Non-circular substrate holders'20128,012,000'Extended pad life for ECMP and barrier removal'20117,993,485'Methods and apparatus for processing a substrate'20117,842,169'Method and apparatus for local polishing control'20107,790,015'Endpoint for electroprocessing'20107,772,121'Method of forming a trench structure'20107,709,382'Electroprocessing profile control'20107,686,942'Method for preparation of ethylene and propylene by catalytic cracking using a fluid-bed catalyst'20107,678,245'Method and apparatus for electrochemical mechanical processing'20107,655,565'Electroprocessing profile control'20107,654,885'Multi-layer polishing pad'20107,628,905'Algorithm for real-time process control of electro-polishing'20097,582,564'Process and composition for conductive material removal by electrochemical mechanical polishing'20097,569,134'Contacts for electrochemical processing'20097,446,041'Full sequence metal and barrier layer electrochemical mechanical processing'20087,427,568'Method of forming an interconnect structure'20087,422,516'Conductive polishing article for electrochemical mechanical polishing'20087,390,744'Method and composition for polishing a substrate'20087,384,534'Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP'20087,374,644'Conductive polishing article for electrochemical mechanical polishing'20087,375,023'Method and apparatus for chemical mechanical polishing of semiconductor substrates'20087,344,431'Pad assembly for electrochemical mechanical processing'20087,323,416'Method and composition for polishing a substrate'20087,323,095'Integrated multi-step gap fill and all feature planarization for conductive materials'20087,311,592'Conductive polishing article for electrochemical mechanical polishing'20077,303,662'Contacts for electrochemical processing'20077,303,462'Edge bead removal by an electro polishing process'20077,294,038'Process control in electrochemically assisted planarization'20077,285,036'Pad assembly for electrochemical mechanical polishing'20077,278,911'Conductive polishing article for electrochemical mechanical polishing'20077,276,743'Retaining ring with conductive portion'20077,232,514'Method and composition for polishing a substrate'20077,232,363'Polishing solution retainer'20077,229,535'Hydrogen bubble reduction on the cathode using double-cell designs'20077,210,988'Method and apparatus for reduced wear polishing pad conditioning'20077,207,878'Conductive polishing article for electrochemical mechanical polishing'20077,160,432'Method and composition for polishing a substrate'20077,137,868'Pad assembly for electrochemical mechanical processing'20067,137,879'Conductive polishing article for electrochemical mechanical polishing'20067,128,825'Method and composition for polishing a substrate'20067,125,477'Contacts for electrochemical processing'20067,115,516'Method of depositing a material layer'20067,112,270'Algorithm for real-time process control of electro-polishing'20067,112,528'Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug'20067,104,869'Barrier removal at low polish pressure'20067,084,064'Full sequence metal and barrier layer electrochemical mechanical processing'20067,077,721'Pad assembly for electrochemical mechanical processing'20067,070,475'Process control in electrochemically assisted planarization'20067,066,800'Conductive polishing article for electrochemical mechanical polishing'20067,060,606'Method and apparatus for chemical mechanical polishing of semiconductor substrates'20067,029,365'Pad assembly for electrochemical mechanical processing'20067,008,554'Dual reduced agents for barrier removal in chemical mechanical polishing'20066,991,526'Control of removal profile in electrochemically assisted CMP'20066,991,528'Conductive polishing article for electrochemical mechanical polishing'20066,988,942'Conductive polishing article for electrochemical mechanical polishing'20066,979,248'Conductive polishing article for electrochemical mechanical polishing'20056,977,036'Method and apparatus for substrate polishing'20056,962,524'Conductive polishing article for electrochemical mechanical polishing'20056,905,965'Reactive preclean prior to metallization for sub-quarter micron application'20056,899,804'Electrolyte composition and treatment for electrolytic chemical mechanical polishing'20056,896,776'Method and apparatus for electro-chemical processing'20056,893,548'Method of conditioning electrochemical baths in plating technology'20056,884,724'Method for dishing reduction and feature passivation in polishing processes'20056,869,498'Chemical mechanical polishing with shear force measurement'20056,863,797'Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP'20056,848,970'Process control in electrochemically assisted planarization'20056,841,057'Method and apparatus for substrate polishing'20056,837,983'Endpoint detection for electro chemical mechanical polishing and electropolishing processes'20056,821,881'Method for chemical mechanical polishing of semiconductor substrates'20046,811,680'Planarization of substrates using electrochemical mechanical polishing'20046,776,693'Method and apparatus for face-up substrate polishing'20046,773,507'Apparatus and method for fast-cycle atomic layer deposition'20046,743,714'Low temperature integrated metallization process and apparatus'20046,740,221'Method of forming copper interconnects'20046,693,030'Reactive preclean prior to metallization for sub-quarter micron application'20046,627,542'Continuous, non-agglomerated adhesion of a seed layer to a barrier layer'20036,620,670'Process conditions and precursors for atomic layer deposition (ALD) of AL2O3'20036,605,531'Hole-filling technique using CVD aluminum and PVD aluminum integration'20036,537,905'Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug'20036,518,176'Method of selective formation of a barrier layer for a contact level via'20036,509,274'Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate'20036,458,684'Single step process for blanket-selective CVD aluminum deposition'20026,436,267'Method for achieving copper fill of high aspect ratio interconnect features'20026,430,458'Semi-selective chemical vapor deposition'20026,362,099'Method for enhancing the adhesion of copper deposited by chemical vapor deposition'20026,258,223'In-situ electroless copper seed layer enhancement in an electroplating system'20016,207,222'Dual damascene metallization'20016,169,030'Metallization process and method'20016,139,905'Integrated CVD/PVD Al planarization using ultra-thin nucleation layers'20006,139,697'Low temperature integrated via and trench fill process and apparatus'20006,120,844'Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer'20006,110,828'In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization'20006,107,192'Reactive preclean prior to metallization for sub-quarter micron application'20006,080,665'Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum'20006,077,781'Single step process for blanket-selective CVD aluminum deposition'20006,066,358'Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer'20006,001,420'Semi-selective chemical vapor deposition'19995,989,623'Dual damascene metallization'19995,770,465'Trench-filling etch-masking microfabrication technique'19985,637,539'Vacuum microelectronic devices with multiple planar electrodes'19975,149,673'Selective chemical vapor deposition of tungsten for microdynamic structures'19925,072,288'Microdynamic release structure'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–1998Patents assigned to CORNELL RES FOUNDATION INC (4)· patent assignee history
1999–2013Patents assigned to APPLIED MATERIALS INC (98)· patent assignee history
1999–2006Based in San Jose, CA, US· patent location history
2000–2013Based in Foster City, CA, US· patent location history
2013–2018Patents assigned to CHEN LIANG (6)· patent assignee history
2016–2020Based in Houston, TX, US· patent location history
2017–2019Patents assigned to BYD CO LTD (6)· patent assignee history
2017–2021Based in Shenzhen, CN· patent location history
2018–2020Based in Saratoga, CA, US· patent location history
2019–2020Patents assigned to LUMMUS TECHNOLOGY INC (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC981999–2013
BYD CO LTD62017–2019
CHEN LIANGself62013–2018
LUMMUS TECHNOLOGY INC52019–2020
CORNELL RES FOUNDATION INC41991–1998
Locations
LocationPatentsSpan
Foster City, California, US832000–2013
San Jose, California, US161999–2006
Houston, Texas, US52016–2020
Shenzhen, CN42017–2021
Saratoga, California, US32018–2020