Inventor
ZHENXING LIANG
Inventor
CN
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth76%
G05BControl or regulating systems in general4%
G10LSpeech analysis techniques or speech synthesis4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
H03MCoding4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
12,529,161Systems for preparing crystals202612,486,595Methods for crystal growth by replacing a sublimated target source material with a candidate source material202512,424,211Method and device for compressing finite-state transducers data202512,286,725Methods and devices for growing crystals with high uniformity without annealing202512,188,146Methods and systems for controlling crystal growth202511,982,014Open Czochralski furnace for single crystal growth202411,926,922Methods for crystal growth by replacing a sublimated target source material with a candidate source material202411,885,037Open Czochralski furnace for single crystal growth202411,851,782Open Czochralski furnace for single crystal growth202311,851,783Open Czochralski furnace for single crystal growth202311,655,557Methods and devices for growing crystals with high uniformity without annealing202311,572,634Open Czochralski furnace for single crystal growth202311,566,342Open Czochralski furnace for single crystal growth202311,566,341Open czochralski furnace for single crystal growth202311,566,343Open Czochralski furnace for single crystal growth202311,441,233Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum202211,408,089Devices and methods for growing crystals202211,198,947Open Czochralski furnace for single crystal growth202111,155,930Open Czochralski furnace for single crystal growth202111,136,690Method for preparing doped yttrium aluminum garnet single crystal fiber by performing a cylindrical surface polishing operation and growing a cladding layer2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to MEISHAN BOYA ADVANCED MAT CO LTD (19)· patent assignee history
2021–2026Based in CN· patent location history
2025Patents assigned to GUANGZHOU ZIIPIN NETWORK TECH CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MEISHAN BOYA ADVANCED MAT CO LTD | 19 | 2021–2026 |
| GUANGZHOU ZIIPIN NETWORK TECH CO LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 20 | 2021–2026 |