Inventor
Christer Hallin
Inventor
Linkoping, SE
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
H01LSemiconductor devices11%
H10DInorganic electric semiconductor devices11%
C23CCoating metallic material7%
Y10TTechnical subjects covered by former us classification4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,892,356Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same202110,840,334Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same202010,192,980Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same20199,608,085'Predisposed high electron mobility transistor'20179,306,009'Mix doping of a semi-insulating Group III nitride'20168,492,772'Homoepitaxial growth of SiC on low off-axis SiC wafers'20137,601,986'Epitaxial semiconductor structures having reduced stacking fault nucleation sites'20097,531,433'Homoepitaxial growth of SiC on low off-axis SiC wafers'20097,396,410'Featuring forming methods to reduce stacking fault nucleation sites'20087,226,805'Sequential lithographic methods to reduce stacking fault nucleation sites'20077,173,285'Lithographic methods to reduce stacking fault nucleation sites'20077,109,521'Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls'20066,093,253'Method and a device for epitaxial growth of objects by chemical vapor deposition'20006,048,398'Device for epitaxially growing objects'20006,039,812'Device for epitaxially growing objects and method for such a growth'20006,030,661'Device and a method for epitaxially growing objects by CVD'20005,792,257'Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD'19985,704,985'Device and a method for epitaxially growing objects by CVD'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2000Patents assigned to ABB RESEARCH LTD (6)· patent assignee history
1998–2000Patents assigned to OKMETIC LTD (4)· patent assignee history
1998–2009Based in Linkoping, SE· patent location history
2006–2021Patents assigned to CREE INC (10)· patent assignee history
2008–2013Based in Linköping, SE· patent location history
2009–2013Patents assigned to NORSTEL AB (2)· patent assignee history
2009Based in Herndon, VA, US· patent location history
2013Patents assigned to BERGMAN PEDER (1)· patent assignee history
2016–2017Based in Chapel Hill, NC, US· patent location history
2019–2021Based in Hillsborough, NC, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CREE INC | 10 | 2006–2021 |
| ABB RESEARCH LTD | 6 | 1998–2000 |
| OKMETIC LTD | 4 | 1998–2000 |
| NORSTEL AB | 2 | 2009–2013 |
| BERGMAN PEDER | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Linkoping, SE | 9 | 1998–2009 |
| Hillsborough, NC, US | 3 | 2019–2021 |
| Chapel Hill, NC, US | 2 | 2016–2017 |
| Linköping, SE | 2 | 2008–2013 |
| Herndon, Virginia, US | 1 | 2009 |