Inventor
Wei-yuan LU
Inventor
TW
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
A61BDiagnosis3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
H10BElectronic memory devices3%
H05KPrinted circuits1%
H10NElectric solid-state devices not otherwise provided for1%
PatentTitleYear
12,408,363Semiconductor device with phosphorus-doped epitaxial features202512,356,707Semiconductor device202512,237,390Low resistance contact feature202512,154,902Semiconductor device and manufacturing method thereof202412,136,673Semiconductor device with self-aligned wavy contact profile and method of forming the same202412,125,879Epitaxial source/drain structure and method202412,080,759Transistor source/drain regions and methods of forming the same202412,015,090Lightly-doped channel extensions202411,961,912Merged source/drain features202411,862,712Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases202411,824,121Semiconductor device with self-aligned wavy contact profile and method of forming the same202311,798,941Semiconductor device having an upper epitaxial layer contacting two lower epitaxial layers202311,791,402Semiconductor device having strained channels202311,791,335Method for forming semiconductor device202311,784,222Epitaxial source/drain structure and method202311,616,142Semiconductor device with self-aligned wavy contact profile and method of forming the same202311,489,078Lightly-doped channel extensions202211,355,641Merged source/drain features202211,329,159Strained structure of a semiconductor device202211,222,951Epitaxial source/drain structure and method202211,211,455Formation of dislocations in source and drain regions of FinFET devices202111,211,295FinFET doping methods and structures thereof202111,195,951Semiconductor device with self-aligned wavy contact profile and method of forming the same202111,158,740MOSFETs with multiple dislocation planes2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (24)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 24 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 24 | 2021–2025 |