Inventor
Trinh Hai Dang
Inventor
Hsinchu, TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10NElectric solid-state devices not otherwise provided for26%
H10BElectronic memory devices17%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
10,388,865High yield RRAM cell with optimized film scheme201910,193,065High K scheme to improve retention performance of resistive random access memory (RRAM)201910,170,699RRAM cell bottom electrode formation20199,876,167High yield RRAM cell with optimized film scheme20189,577,191'RRAM cell bottom electrode formation'20179,431,609'Oxide film scheme for RRAM structure'20169,130,026'Crystalline layer for passivation of III-N surface'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2019Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2015–2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2015–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 7 | 2015–2019 |