Inventor

Daniele Mauri

Inventor

San Jose, CA, US

Overview

1993–2021

Patent span

Physics

Primary field (CPC G)

Patents· 91 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary

G11BInformation storage based on relative movement between record carrier and transducer33%

B82YSpecific uses or applications of nanostructures22%

G01RMeasuring electric variables16%

Y10TTechnical subjects covered by former us classification10%

H01FMagnets6%

H10NElectric solid-state devices not otherwise provided for5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%

C21DModifying the physical structure of ferrous metals1%

C23CCoating metallic material1%

G11CStatic stores1%

PatentTitleYear

11,127,422Magnetic read sensors and related methods having a rear hard bias and no AFM layer2021 11,087,785Effective rear hard bias for dual free layer read heads2021 10,957,346Magnetic recording devices and methods using a write-field-enhancement structure and bias current with offset pulses2021 10,777,222Two-dimensional magnetic recording (TDMR) read head structure with different stacked sensors and disk drive incorporating the structure2020 10,720,570Magnetic sensor using spin hall effect2020 10,643,642Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field2020 10,388,305Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field2019 10,354,681Tunnel magnetoresistance read head including side shields containing nanocrystalline ferromagnetic particles2019 10,115,419Method for AFC shields for multiple sensor magnetic transducers and magnetic transducers having multiple sensors and AFC shields2018 9,922,672'Dual free layer magnetic reader having a rear bias structure having a high aspect ratio'2018 9,812,155'Method and system for fabricating high junction angle read sensors'2017 9,754,613'Method for AFC shields for multiple sensor magnetic transducers and magnetic transducers having multiple sensors and AFC shields'2017 9,472,216'Differential dual free layer magnetic reader'2016 9,449,621'Dual free layer magnetic reader having a rear bias structure having a high aspect ratio'2016 9,431,031'System and method for magnetic transducers having multiple sensors and AFC shields'2016 9,396,743'Systems and methods for controlling soft bias thickness for tunnel magnetoresistance readers'2016 9,384,763'Dual free layer magnetic reader having a rear bias structure including a soft bias layer'2016 9,230,565'Magnetic shield for magnetic recording head'2016 9,147,404'Method and system for providing a read transducer having a dual free layer'2015 9,087,534'Method and system for providing a read transducer having soft and hard magnetic bias structures'2015 9,013,836'Method and system for providing an antiferromagnetically coupled return pole'2015 8,860,407'Method and system for performing on-wafer testing of heads'2014 8,760,823'Method and system for providing a read transducer having soft and hard magnetic bias structures'2014 8,675,316'Magnetoresistive sensor with sub-layering of pinned layers'2014 8,675,318'Method and system for providing a read transducer having a reduced shield-to-shield spacing'2014 8,630,068'Method and system for providing a side shielded read transducer'2014 8,611,054'Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore'2013 8,493,695'Method and system for providing a magnetic read transducer having an improved signal to noise ratio'2013 8,305,715'Magnetoresistance (MR) read elements having an active shield'2012 8,133,363'Dual magnetic tunnel junction sensor with a longitudinal bias stack'2012 8,037,593'Method for manufacturing an ultra narrow gap magnetoresistive sensor'2011 7,863,911'Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique'2011 7,848,064'Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing'2010 7,791,845'Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer'2010 7,751,156'Dual-layer free layer in a tunneling magnetoresistance (TMR) element'2010 7,675,717'Magnetic read head having increased electron exchange'2010 7,564,110'Electrical lapping guides made from tunneling magnetoresistive (TMR) material'2009 7,488,609'Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device'2009 7,446,986'Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling'2008 7,413,636'Method for manufacturing a dual spin valve sensor having a longitudinal bias stack'2008 7,408,747'Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing'2008 7,239,489'Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process'2007 7,230,801'Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process'2007 7,228,617'Method for fabricating a GMR read head portion of a magnetic head'2007 7,187,524'Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process'2007 7,161,771'Dual spin valve sensor with a longitudinal bias stack'2007 7,151,653'Depositing a pinned layer structure in a self-pinned spin valve'2006 7,133,264'High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head'2006 7,054,085'Use of shunt resistor with large RA product tunnel barriers'2006 7,020,951'Method of making a merged magnetic read head and write head'2006 6,989,971'Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process'2006 6,920,021'Sunken electrical lead defined narrow track width magnetic head'2005 6,910,259'Method of making a spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap'2005 6,896,975'Spin-valve sensor with pinning layers comprising multiple antiferromagnetic films'2005 6,876,525'Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process'2005 6,873,499'Read head having high resistance soft magnetic flux guide layer for enhancing read sensor efficiency'2005 6,841,395'Method of forming a barrier layer of a tunneling magnetoresistive sensor'2005 6,822,838'Dual magnetic tunnel junction sensor with a longitudinal bias stack'2004 6,788,499'Spin valve sensor with insulating and conductive seed layers'2004 6,785,099'Read gap improvements through high resistance magnetic shield layers'2004 6,780,524'In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture'2004 6,775,111'Trilayer seed layer structure for spin valve sensor'2004 6,747,852'Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer'2004 6,735,058'Current-perpendicular-to-plane read head with an amorphous magnetic bottom shield layer and an amorphous nonmagnetic bottom lead layer'2004 6,731,477'Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication'2004 6,709,767'In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture'2004 6,592,725'Fabrication method for spin valve sensor with insulating and conducting seed layers'2003 6,525,913'Read head with sunken prefill insulation for preventing lead to shield shorts and maintaining planarization'2003 6,521,098'Fabrication method for spin valve sensor with insulating and conducting seed layers'2003 6,519,120'Ap-pinned spin valves with enhanced GMR and thermal stability'2003 6,411,476'Trilayer seed layer structure for spin valve sensor'2002 6,262,869'Spin valve sensor with encapsulated keeper layer and method of making'2001 6,223,420'Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency'2001 6,185,078'Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap'2001 6,175,477'Spin valve sensor with nonmagnetic oxide seed layer'2001 6,175,475'Fully-pinned, flux-closed spin valve'2001 6,162,305'Method of making spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers'2000 6,141,191'Spin valves with enhanced GMR and thermal stability'2000 6,127,053'Spin valves with high uniaxial anisotropy reference and keeper layers'2000 6,117,569'Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers'2000 6,088,204'Magnetoresistive magnetic recording head with permalloy sensor layer deposited with substrate heating'2000 5,999,379'Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making'1999 5,856,897'Self-biased dual spin valve sensor'1999 5,768,069'Self-biased dual spin valve sensor'1998 5,731,936'Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability'1998 5,614,727'Thin film diode having large current capability with low turn-on voltages for integrated devices'1997 5,583,725'Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor'1996 5,436,778'Magnetoresistive sensor having antiferromagnetic exchange bias'1995 5,380,548'Method for fabricating a magnetoresistive sensor having antiferromagnetic layer'1995 5,315,468'Magnetoresistive sensor having antiferromagnetic layer for exchange bias'1994 5,206,590'Magnetoresistive sensor based on the spin valve effect'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2012Patents assigned to IBM (39)· patent assignee history

1993–2021Based in San Jose, CA, US· patent location history

2004–2010Patents assigned to HITACHI GLOBAL STORAGE TECH (19)· patent assignee history

2012–2014Patents assigned to MAURI DANIELE (9)· patent assignee history

2013–2018Patents assigned to WESTERN DIGITAL FREMONT LLC (14)· patent assignee history

2019–2021Patents assigned to WESTERN DIGITAL TECH INC (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	39	1993–2012
HITACHI GLOBAL STORAGE TECH	19	2004–2010
WESTERN DIGITAL FREMONT LLC	14	2013–2018
MAURI DANIELEself	9	2012–2014
WESTERN DIGITAL TECH INC	7	2019–2021

Locations

Location	Patents	Span
San Jose, California, US	91	1993–2021