Inventor

Naruhito Iwasa

Inventor
Anan-shi, JP

Overview

25→
Patents
1994–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers29%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light23%
B82YSpecific uses or applications of nanostructures17%
C23CCoating metallic material9%
C30BSingle-crystal growth9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds1%
C09JAdhesives1%
PatentTitleYear
10,604,600Photocurable resin composition and cured product of same20208,304,790'Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor'2012RE042770'Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer'20117,442,254'Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer'20087,166,874'Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor'20077,166,869'Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor'20077,154,128'Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device'20067,083,679'Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device'20066,940,103'Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device'20056,900,465'Nitride semiconductor light-emitting device'20056,791,103'Light-emitting gallium nitride-based compound semiconductor device'20046,756,611'Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device'20046,580,099'Nitride semiconductor light-emitting devices'20036,469,323'Light-emitting gallium nitride-based compound semiconductor device'20026,215,133'Light-emitting gallium nitride-based compound semiconductor device'20016,153,010'Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device'20006,078,063'Light-emitting gallium nitride-based compound semiconductor device'20005,959,307'Nitride semiconductor device'19995,880,486'Light-emitting gallium nitride-based compound semiconductor device'19995,777,350'Nitride semiconductor light-emitting device'19985,747,832'Light-emitting gallium nitride-based compound semiconductor device'19985,734,182'Light-emitting gallium nitride-based compound semiconducor device'19985,578,839'Light-emitting gallium nitride-based compound semiconductor device'19965,468,678'Method of manufacturing P-type compound semiconductor'19955,306,662'Method of manufacturing P-type compound semiconductor'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2006Patents assigned to NICHIA KAGAKU KOGYO KK (16)· patent assignee history
1994–2011Based in Anan-shi, JP· patent location history
1998–2005Based in Tokushima, JP· patent location history
1999–2012Based in Komatsushima, JP· patent location history
2004–2012Patents assigned to NICHIA CORP (8)· patent assignee history
2012Patents assigned to IWASA NARUHITO (1)· patent assignee history
2012Patents assigned to NAGAHAMA SHINICHI (1)· patent assignee history
2012Patents assigned to NAKAMURA SHUJI (1)· patent assignee history
2020Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NICHIA KAGAKU KOGYO KK161994–2006
NICHIA CORP82004–2012
IWASA NARUHITOself12012
NAGAHAMA SHINICHI12012
NAKAMURA SHUJI12012
Locations
LocationPatentsSpan
Anan-shi, JP171994–2011
Komatsushima, JP41999–2012
Tokushima, JP31998–2005
Osaka, JP12020