Inventor

Adrianus W. Ludikhuize

Inventor

Eindhoven, NL

Overview

1977–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices58%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%

H03HImpedance networks, e.g. resonant circuits4%

H03KPulse technique4%

Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications4%

H02PControl or regulation of electric motors, electric generators or dynamo-electric converters2%

H03GControl of amplification2%

H05BElectric heating2%

PatentTitleYear

8,022,506'SOI device with more immunity from substrate voltage'2011 7,790,589'Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors'2010 7,459,750'Integrated half-bridge power circuit'2008 7,061,059'Semiconductor device'2006 6,933,559'LDMOS with guard ring (of same type as drain) surrounding the drain'2005 6,608,351'Semiconductor device comprising a high-voltage circuit element'2003 6,597,044'Semiconductor device having a charge removal facility for minority carriers'2003 6,288,424'Semiconductor device having LDMOS transistors and a screening layer'2001 6,160,304'Semiconductor device comprising a half-bridge circuit'2000 5,998,845'Semiconductor device having increased safe operating range'1999 5,976,942'Method of manufacturing a high-voltage semiconductor device'1999 5,910,670'Semiconductor device with improved breakdown voltage characteristics'1999 5,883,413'Lateral high-voltage DMOS transistor with drain zone charge draining'1999 5,796,146'Semiconductor device having a lateral insulated gate biopolar transistor'1998 5,786,252'Method of manufacturing a semiconductor device, and semiconductor device manufactured by such a method'1998 5,747,841'Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement'1998 5,610,432'Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode'1997 5,473,180'Semiconductor device with an MOST provided with an extended drain region for high voltages'1995 5,412,234'Integrated semiconductor circuit having improved breakdown voltage characteristics'1995 5,347,155'Semiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region'1994 5,324,978'Semiconductor device having an improved breakdown voltage-raising structure'1994 4,987,469'Lateral high-voltage transistor suitable for use in emitter followers'1991 4,952,998'Integrated circuit with complementary MOS transistors'1990 4,908,551'DC/AC bridge circuit'1990 4,750,028'Semiconductor device having floating semiconductor zones'1988 4,682,205'Semiconductor device'1987 4,590,509'MIS high-voltage element with high-resistivity gate and field-plate'1986 4,422,089'Semiconductor device having a reduced surface field strength'1983 4,143,383'Controllable impedance attenuator having all connection contacts on one side'1979 4,047,131'Voltage-controlled HF-signal attenuator'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–2001Patents assigned to PHILIPS CORP (23)· patent assignee history

1977–2008Based in Eindhoven, NL· patent location history

2003–2006Patents assigned to KONINKL PHILIPS ELECTRONICS NV (3)· patent assignee history

2008–2011Patents assigned to NXP BV (3)· patent assignee history

2010–2011Based in Valkenswaard, NL· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
PHILIPS CORP	23	1977–2001
KONINKL PHILIPS ELECTRONICS NV	3	2003–2006
NXP BV	3	2008–2011

Locations

Location	Patents	Span
Eindhoven, NL	28	1977–2008
Valkenswaard, NL	2	2010–2011