Inventor
Richard A. Mauritzson
Inventor
Meridian, ID, US
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation41%
H04NPictorial communication, e.g. television22%
H01LSemiconductor devices9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light7%
H03FAmplifiers7%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
G06KGraphical data reading1%
G06TImage data processing or generation, in general1%
G06VImage or video recognition or understanding1%
PatentTitleYear
11,133,346Stacked-die image sensors with shielding202110,566,375Stacked-die image sensors with shielding202010,475,832High dynamic range pixel using light separation201910,276,614Methods and apparatus for an image sensor with a multi-branch transistor20199,930,281'Image sensors having photodiode regions implanted from multiple sides of a substrate'20189,888,198'Imaging systems having image sensor pixel arrays with sub-pixel resolution capabilities'20189,871,068'Methods and apparatus for an image sensor with a multi-branch transistor'20189,847,359Image sensors with improved surface planarity20179,848,148Methods and apparatus for a multiple storage pixel imaging system20179,686,486'Multi-resolution pixel architecture with shared floating diffusion nodes'20179,350,914'Methods of enforcing privacy requests in imaging systems'20168,314,498'Isolated bond pad with conductive via interconnect'20128,138,462'Resetting a row driven imager pixel'20128,129,761'Contacts for CMOS imagers and method of formation'20128,115,157'Row driven imager pixel'20128,105,864'Method of forming barrier regions for image sensors'20128,026,969'Pixel for boosting pixel reset voltage'20117,985,658'Method of forming substrate for use in imager devices'20117,902,624'Barrier regions for image sensors'20117,858,914'Method and apparatus for reducing dark current and hot pixels in CMOS image sensors'20107,847,366'Well for CMOS imager'20107,829,832'Method for operating a pixel cell using multiple pulses to a transistor transfer gate'20107,800,146'Implanted isolation region for imager pixels'20107,772,027'Barrier regions for image sensors'20107,768,047'Imager element, device and system with recessed transfer gate'20107,755,121'Imagers, apparatuses and systems utilizing pixels with improved optical resolution and methods of operating the same'20107,749,798'Optimized photodiode process for improved transfer gate leakage'20107,737,388'Row driven imager pixel'20107,728,279'Methods, devices, and systems related to pixel arrays'20107,724,293'Multi-purpose image sensor circuits, imager, system and method of operation'20107,662,658'Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation'20107,652,704'Pixel for boosting pixel reset voltage'20107,642,608'Dual isolation for image sensors'20107,573,113'Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation'20097,511,354'Well for CMOS imager and method of formation'20097,498,188'Contacts for CMOS imagers and method of formation'20097,485,836'Row driver for selectively supplying operating power to imager pixel'20097,459,668'Method, apparatus, and system to reduce ground resistance in a pixel array'20087,432,148'Shallow trench isolation by atomic-level silicon reconstruction'20087,420,233'Photodiode for improved transfer gate leakage'20087,226,803'Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation'20077,196,304'Row driver for selectively supplying operating power to imager pixel'20077,190,041'Well for CMOS imager'20077,176,434'Row driven imager pixel'20077,122,408'Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation'20067,002,231'Barrier regions for image sensors'20066,897,082'Method of forming well for CMOS imager'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2010Patents assigned to MICRON TECHNOLOGY INC (16)· patent assignee history
2005–2012Based in Boise, ID, US· patent location history
2006–2021Based in Meridian, ID, US· patent location history
2009–2012Patents assigned to APTINA IMAGING CORP (17)· patent assignee history
2010–2012Patents assigned to ROUND ROCK RES LLC (3)· patent assignee history
2012Patents assigned to MAURITZSON RICHARD A (4)· patent assignee history
2012Based in Santa Clara, CA, US· patent location history
2017–2021Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (10)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APTINA IMAGING CORP | 17 | 2009–2012 |
| MICRON TECHNOLOGY INC | 16 | 2005–2010 |
| SEMICONDUCTOR COMPONENTS IND LLC | 10 | 2017–2021 |
| MAURITZSON RICHARD Aself | 4 | 2012 |
| ROUND ROCK RES LLC | 3 | 2010–2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Meridian, ID, US | 28 | 2006–2021 |
| Boise, ID, US | 18 | 2005–2012 |
| Santa Clara, California, US | 1 | 2012 |