Inventor
YI-MIN CHEN
Inventor
TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices19%
H10DInorganic electric semiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
A43DMachines, tools, equipment or methods for manufacturing or repairing footwear10%
A46BBrushes10%
B24BMachines, devices, or processes for grinding or polishing10%
B24DTools for grinding, buffing or sharpening10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H01GCapacitors3%
H03KPulse technique3%
PatentTitleYear
12,525,484Interconnect structure for multi-thickness semiconductor device202612,456,677Via landing on first and second barrier layers to reduce cleaning time of conductive structure202512,285,082Buffing system for footwear202512,274,330Buffing system for footwear202512,161,199Buffing system for footwear202412,062,687Semiconductor device including a capacitor202412,029,282Buffing system for footwear202411,942,543Semiconductor device structure with high voltage device202411,923,425Shielding structure for ultra-high voltage semiconductor devices202411,862,675High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device202411,825,916Buffing system for footwear202311,819,090Buffing system for footwear202311,776,901Via landing on first and second barrier layers to reduce cleaning time of conductive structure202311,728,374Semiconductor device including a capacitor202311,588,028Shielding structure for ultra-high voltage semiconductor devices202311,553,763Buffing system for footwear202311,424,359Semiconductor device structure with high voltage device202211,410,991Series resistor over drain region in high voltage device202211,145,713High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device202111,145,709Semiconductor device including a capacitor2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (13)· patent assignee history
2021–2026Based in TW· patent location history
2023–2025Patents assigned to NIKE INC (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 13 | 2021–2026 |
| NIKE INC | 7 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 20 | 2021–2026 |