Inventor
KOJI KAMEI
Inventor
JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
G01NInvestigating or analysing materials by determining their chemical or physical properties15%
H01LSemiconductor devices15%
C23CCoating metallic material12%
H10DInorganic electric semiconductor devices12%
G06TImage data processing or generation, in general6%
C01BNon-metallic elements3%
PatentTitleYear
12,516,444SiC single crystal substrate202611,961,736SiC epitaxial wafer, production method therefor, and defect identification method202411,705,329SiC epitaxial wafer and method for manufacturing same202311,320,388SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor202211,315,839Evaluation method and manufacturing method of SiC epitaxial wafer202211,293,115Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less202211,249,027SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2024Patents assigned to SHOWA DENKO KK (6)· patent assignee history
2022–2026Based in JP· patent location history
2024–2026Patents assigned to RESONAC CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHOWA DENKO KK | 6 | 2022–2024 |
| RESONAC CORP | 2 | 2024–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 7 | 2022–2026 |