Inventor

Hideaki Fukuda

Inventor

Tokyo, JP

Overview

1994–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material22%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%

H01LSemiconductor devices15%

H10DInorganic electric semiconductor devices10%

G06FElectric digital data processing9%

H01JElectric discharge tubes or discharge lamps4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

H04LTransmission of digital information, e.g. telegraphic communication2%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%

B08BCleaning in general1%

PatentTitleYear

11,069,522Si precursors for deposition of SiN at low temperatures2021 10,854,498Wafer-supporting device and method for producing same2020 10,784,105Methods for forming doped silicon oxide thin films2020 10,766,069Method for manufacturing electrode material2020 10,733,118Computer system, communication device, and storage control method with DMA transfer of data2020 10,655,221Method for depositing oxide film by thermal ALD and PEALD2020 10,614,969Method for manufacturing electrode material and electrode material2020 10,510,530Methods for forming doped silicon oxide thin films2019 10,435,790Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap2019 10,395,917Si precursors for deposition of SiN at low temperatures2019 10,147,600Methods for forming doped silicon oxide thin films2018 9,905,416'Si precursors for deposition of SiN at low temperatures'2018 9,875,893Methods for forming doped silicon oxide thin films2018 9,812,319'Method for forming film filled in trench without seam or void'2017 9,812,320'Method and apparatus for filling a gap'2017 9,627,221'Continuous process incorporating atomic layer etching'2017 9,576,790'Deposition of boron and carbon containing materials'2017 9,564,309'Si precursors for deposition of SiN at low temperatures'2017 9,564,314'Methods for forming doped silicon oxide thin films'2017 9,455,138'Method for forming dielectric film in trenches by PEALD using H-containing gas'2016 9,368,352'Methods for forming doped silicon oxide thin films'2016 9,343,297'Method for forming multi-element thin film constituted by at least five elements by PEALD'2016 9,171,716'Method of forming metal oxide hardmask'2015 9,153,441'Methods for forming doped silicon oxide thin films'2015 8,924,606'Storage system and data transfer control method'2014 8,901,016'Method of forming metal oxide hardmask'2014 8,784,950'Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group'2014 8,679,958'Methods for forming doped silicon oxide thin films'2014 8,669,185'Method of tailoring conformality of Si-containing film'2014 8,572,342'Data transfer device with confirmation of write completion and method of controlling the same'2013 8,340,087'Storage subsystem'2012 8,321,622'Storage system with multiple controllers and multiple processing paths'2012 8,219,760'Storage subsystem and its control method'2012 8,103,939'Storage system and data storage method'2012 8,099,563'Storage device and access instruction sending method'2012 7,833,353'Liquid material vaporization apparatus for semiconductor processing apparatus'2010 7,817,626'Storage subsystem'2010 7,799,134'Shower plate having projections and plasma CVD apparatus using same'2010 7,789,965'Method of cleaning UV irradiation chamber'2010 7,697,311'Storage apparatus, controller and control method'2010 7,498,242'Plasma pre-treating surfaces for atomic layer deposition'2009 7,462,245'Single-wafer-processing type CVD apparatus'2008 7,460,383'Storage apparatus, controller and control method'2008 7,276,123'Semiconductor-processing apparatus provided with susceptor and placing block'2007 7,234,476'Method of cleaning CVD equipment processing chamber'2007 6,921,556'Method of film deposition using single-wafer-processing type CVD'2005 6,524,955'Method of forming thin film onto semiconductor substrate'2003 6,439,154'Plasma processing apparatus for semiconductors'2002 6,413,887'Method for producing silicon nitride series film'2002 6,187,691'Method of forming film on semiconductor substrate in film-forming apparatus'2001 5,986,587'Redundant binary code converting circuit and multiplication circuit using same'1999 5,935,649'Method for manufacturing SiOF films'1999 5,890,105'Low bit rate coding system for high speed compression of speech data'1999 5,297,946'Multilayer parison extruder'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2015Patents assigned to ASM JAPAN (14)· patent assignee history

1999–2020Based in Tama, JP· patent location history

2008–2020Patents assigned to HITACHI LTD (11)· patent assignee history

2008–2014Based in Odawara, JP· patent location history

2012–2020Patents assigned to FUKUDA HIDEAKI (11)· patent assignee history

2014–2021Patents assigned to ASM IP HOLDING BV (14)· patent assignee history

2014–2021Based in Tokyo, JP· patent location history

2014–2017Based in Hachioji, JP· patent location history

2017–2020Patents assigned to ASM INT NV (5)· patent assignee history

2017–2020Based in Portland, OR, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM IP HOLDING BV	14	2014–2021
ASM JAPAN	14	1999–2015
FUKUDA HIDEAKIself	11	2012–2020
HITACHI LTD	11	2008–2020
ASM INT NV	5	2017–2020

Locations

Location	Patents	Span
Tokyo, JP	15	2014–2021
Tama, JP	14	1999–2020
Odawara, JP	10	2008–2014
Hachioji, JP	7	2014–2017
Portland, OR, US	3	2017–2020