Inventor

Akira Usui

Inventor

Tokyo, JP

Overview

58→

Patents

1983–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary

C30BSingle-crystal growth12%

G11BInformation storage based on relative movement between record carrier and transducer10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

H03DDemodulation or transference of modulation from one carrier to another7%

H04NPictorial communication, e.g. television7%

H10HInorganic light-emitting semiconductor devices having potential barriers6%

H03JTuning resonant circuits5%

Y10TTechnical subjects covered by former us classification5%

H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner4%

B24DTools for grinding, buffing or sharpening3%

PatentTitleYear

10,266,965Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal2019 8,345,883'Audio playback method and apparatus using line array speaker unit'2013 8,308,532'Abrasive article'2012 7,829,913'Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method'2010 7,656,779'Method for forming visible images on optical recording medium'2010 7,580,530'Audio characteristic correction system'2009 7,535,809'Optical recording apparatus with drawing capability of visible image on disk face'2009 7,496,023'Method, program and system of forming visual image on optical disk'2009 7,463,295'Characteristic correction apparatus for gamma correcting an image based on the image type'2008 7,339,863'Method of recording information on optical disks at a recording density proportional to the actual information volume and disk nominal capacity'2008 7,196,399'Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density'2007 7,189,588'Group III nitride semiconductor substrate and its manufacturing method'2007 7,097,920'Group III nitride based semiconductor substrate and process for manufacture thereof'2006 7,082,094'Optical recording apparatus with drawing capability of visible image on disk face'2006 7,046,597'Optical disk apparatus for recording information at a recording density proportional to the actual information volume and disk nominal capacity'2006 7,012,864'Optical disk recorder for writing data with variable density'2006 6,980,495'Optical recording apparatus with interleaving blank rounds into spiral track'2005 6,924,159'Semiconductor substrate made of group III nitride, and process for manufacture thereof'2005 6,812,051'Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure'2004 6,667,252'Method of manufacturing compound semiconductor substrate'2003 6,577,347'Television receiver and additional information transmitting method'2003 6,555,845'Method for manufacturing group III-V compound semiconductors'2003 6,532,269'Data transmitter, data receiver, processor, equipment managing device, equipment managing system, data transmitting-receiving system, and medium'2003 6,395,239'Ozonizer'2002 6,348,096'Method for manufacturing group III-V compound semiconductors'2002 6,345,388'Method and apparatus for transmitting and receiving television signal'2002 6,335,763'Television receiver and additional information transmitting method'2002 6,252,261'GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor'2001 6,183,677'Method of manufacturing abrasive sheet with thin resin film'2001 5,928,760'Abrasive sheet with thin resin film'1999 5,902,393'Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy'1999 5,598,447'Integrated circuit device having internal fast clock source'1997 5,553,042'Optical disk recording device'1996 5,526,333'Optical disk recording device'1996 5,505,159'Epitaxial growth method of semiconductor crystal and molecular beam epitaxy apparatus for the same'1996 5,469,806'Method for epitaxial growth of semiconductor crystal by using halogenide'1995 5,355,532'Television tuner unit having shield housing'1994 5,203,032'Station selecting apparatus'1993 5,179,729'Tuner station selecting apparatus'1993 5,101,369'Digital filter capable of sample rate alteration'1992 5,093,922'Receiving apparatus for receiving a BS-IF signal converted into a superhigh band or UHF band'1992 5,014,349'Television tuner for common use in BS/UV'1991 4,866,648'Digital filter'1989 4,861,941'Shielding device'1989 4,835,492'Voltage controlled oscillator having constant tuning bias voltage'1989 4,817,195'Channel selection apparatus having automatic frequency compensation for transmission frequency error'1989 4,811,254'Displacement detector for an encoder'1989 4,806,876'High frequency amplifier circuit'1989 4,797,638'Oscillator including a transistor used both as constant current source and amplifier'1989 4,772,862'Filter apparatus'1988 4,764,736'Amplifier for high frequency signal'1988 4,751,475'Local oscillation apparatus'1988 4,701,819'Magnetic head to effect high density magnetic recording'1987 4,694,293'Data transmission system'1987 4,680,602'Light emitting diode'1987 4,677,692'Frequency conversion apparatus'1987 4,409,776'Method and apparatus for packing articles with composite stretched films'1983 4,387,398'Television video signal detector'1983

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1983–2003Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (19)· patent assignee history

1983–2003Based in Takatsuki, JP· patent location history

1987–2010Patents assigned to NEC CORP (10)· patent assignee history

1987–2019Based in Tokyo, JP· patent location history

1987–2013Based in Hamamatsu, JP· patent location history

1987Based in Ibaragi, JP· patent location history

1989–2013Patents assigned to YAMAHA CORP (15)· patent assignee history

1989–2008Based in Osaka, JP· patent location history

1999–2012Patents assigned to KOVAX CORP (3)· patent assignee history

2004–2010Patents assigned to HITACHI CABLE (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD	19	1983–2003
YAMAHA CORP	15	1989–2013
NEC CORP	10	1987–2010
HITACHI CABLE	6	2004–2010
KOVAX CORP	3	1999–2012

Locations

Location	Patents	Span
Tokyo, JP	19	1987–2019
Hamamatsu, JP	17	1987–2013
Takatsuki, JP	17	1983–2003
Osaka, JP	3	1989–2008
Ibaragi, JP	1	1987