Inventor

Naoya Hasegawa

Inventor

Niigata, JP

Overview

1991–2020

Patent span

Physics

Primary field (CPC G)

Patents· 189 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary

G11BInformation storage based on relative movement between record carrier and transducer23%

B82YSpecific uses or applications of nanostructures21%

H01FMagnets16%

G01RMeasuring electric variables14%

Y10TTechnical subjects covered by former us classification12%

H10NElectric solid-state devices not otherwise provided for7%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

C23CCoating metallic material1%

G11CStatic stores1%

B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form0%

PatentTitleYear

10,808,761Rolling bearing, and abrasion resistance treatment method for bearing raceway surface2020 8,208,231'Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer'2012 8,130,476'Tunneling magnetic sensing element and method for manufacturing the same'2012 8,124,253'Tunneling magnetic sensing element including MGO film as insulating barrier layer'2012 8,054,588'Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer'2011 8,045,300'Tunneling magnetic sensing element and method for producing same'2011 8,023,233'Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same'2011 8,009,391'Magnetic sensing element and method for manufacturing the same'2011 7,969,690'Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers'2011 7,969,693'Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor'2011 7,961,442'Tunneling magnetic detecting element having insulation barrier layer and method for making the same'2011 7,933,100'Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon'2011 7,916,436'Tunneling magnetic sensor including platinum layer and method for producing the same'2011 7,907,370'Tunneling magnetic sensing element having free layer containing CoFe alloy'2011 7,881,024'Tunnel-type magnetic detecting element and method of manufacturing the same'2011 7,839,608'Tunnel-type magnetic detecting device having laminated seed layer'2010 7,800,867'CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer'2010 7,800,866'Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer'2010 7,787,221'Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers'2010 7,760,473'Magnetoresistance element employing Heusler alloy as magnetic layer'2010 7,738,218'Magnetic detection head and method for manufacturing the same'2010 7,724,481'Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys'2010 7,643,254'Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer'2010 7,616,410'Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same'2009 7,609,489'Magnetic sensor using NiFe alloy for pinned layer'2009 7,599,155'Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path'2009 7,567,413'Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same'2009 7,567,412'Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same'2009 7,564,661'Magnetic sensing element including free layer having gradient composition and method for manufacturing the same'2009 7,558,029'Magnetic detectible head comprising free layer'2009 7,554,776'CCP magnetic detecting element including a self-pinned CoFe layer'2009 7,502,210'CPP magnetic detecting device containing NiFe alloy on free layer thereof'2009 7,499,249'Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same'2009 7,499,248'Magnetic detective head comprising free layer'2009 7,495,868'Exchange coupling film and magnetic sensing element including the same'2009 7,480,122'Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device'2009 7,466,525'Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer'2008 7,463,457'CPP giant magnetoresistive element with particular bulk scattering coefficient'2008 7,463,026'Magnetic sensor including bridge circuit having fixed resistance like structure of element'2008 7,443,635'Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector'2008 7,433,161'Spin-valve element having fixed layer containing nano-oxide layer'2008 7,428,128'High read output, high sensitivity magnetic sensing element'2008 7,397,639'Magnetic detecting element provided with free layer having layered-ferri configuration'2008 7,369,372'Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing element'2008 7,365,948'Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film'2008 7,362,546'Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer'2008 7,336,453'Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy'2008 7,312,959'Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor'2007 7,312,960'Magnetic sensing element comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic conductive layer disposed therebetween'2007 7,310,208'Magnetoresistive sensor containing self-pinned layer containing a plurality of magnetic sublayers with magnetostriction-enhancing layer made of a nonmagnetic material'2007 7,310,207'Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure'2007 7,295,409'CPP giant magnetoresistive element with particular bulk scattering coefficient'2007 7,295,408'Dual type magnetic sensing element wherein Î”RÃ—A in upstream part in flow direction of electric current is smaller than Î”RÃ—A in downstream part'2007 7,283,335'Magnetic detecting element'2007 7,268,983'Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer'2007 7,268,984'Magnetic detecting element having a self-pinned layer'2007 7,268,978'Self-pinned magnetic detecting element'2007 7,265,540'Angle sensor having low waveform distortion'2007 7,241,515'Electrode layer for thin-film magnetic heads'2007 7,229,706'Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic layer'2007 7,220,499'CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element'2007 7,218,487'Exchange coupling film and magnetoresistive element using the same'2007 7,218,485'GMR element having fixed magnetic layer provided on side surface of free magnetic layer'2007 7,212,383'Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same'2007 7,196,879'Exchange coupling film and magnetoresistive element using the same'2007 7,193,411'Angle sensor having low waveform distortion'2007 7,178,222'Method of manufacturing a tunneling magnetoresistive element'2007 7,164,560'Spin-valve magnetoresistive thin film element'2007 7,158,354'Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected Î² values'2007 7,150,092'Method for manufacturing spin valve'2006 7,142,399'Exchange coupling film and magnetoresistive element using the same'2006 7,132,175'GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer and method of manufacturing the detecting element'2006 7,126,797'Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer'2006 7,123,453'Exchange coupling film and magnetoresistive element using the same'2006 7,119,996'Exchange coupling film and magnetoresistive element using the same'2006 7,119,998'Exchange coupling film and magnetoresistive element using the same'2006 7,106,560'Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction than free layer'2006 7,106,559'Exchange coupling film and magnetoresistive element using the same'2006 7,092,222'Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same'2006 7,092,218'Magnetic head comprising magnetic domain control layer formed on ABS-side of magnetic flux guide for GMR element and method of manufacturing the magnetic head'2006 7,077,936'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film'2006 7,079,362'Giant magnetoresistive element'2006 7,075,759'Magnetic sensing element with free layer biasing using varying thickness nonmagnetic coupling layer'2006 7,063,904'Exchange coupling film, magnetic detecting element using the exchange coupling film, and method of making same'2006 7,054,115'Spin-valve thin-film magnetic element and method for making the same'2006 7,054,116'Spin valve element and thin film magnetic head'2006 7,050,275'Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same'2006 7,045,224'Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same'2006 7,029,771'Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy'2006 7,008,703'Magnetic detecting element having second antiferromagnetic layer overlying second free magnetic layer extending in track width direction beyond track width'2006 7,005,014'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film'2006 7,005,201'Magnetic detecting element'2006 7,002,782'Magnetic sensing element biased by two antiferromagnetic layers above free magnetic layer and two hard bias layers at two sides of the free magnetic layer, and method for making the same'2006 6,995,961'Magnetic sensing element comprising antiferromagnetic layer laminated on free magnetic layer'2006 6,992,867'Spin valve element and thin film magnetic head having antiferromagnetic coupled layers'2006 6,979,500'GMR magnetic sensing element provided with second free layer extended to outside of track width and method for manufacturing the same'2005 6,980,403'Magnetic sensing element with side shield layers'2005 6,961,223'Spin-valve thin-film magnetic element without sensing current shunt and thin-film magnetic head including the same'2005 6,952,328'Magnetic sensing element having second antiferromagnetic layer on edge sections and rear end of a middle section of free magnetic layer'2005 6,921,587'Magnetic sensing element including second free magnetic layer extending wider than track width and method for fabricating same'2005 6,913,836'Spin-valve type magnetoresistive sensor and method of manufacturing the same'2005 6,903,907'Magnetic sensing element having specular layer'2005 6,901,652'Method for manufacturing magnetic sensing element having improved magnetic field sensitivity'2005 6,893,734'Magnetic sensing element with improved sensitivity and method for making the same'2005 6,891,703'Exchange coupled film having magnetic layer with non-uniform composition and magnetic sensing element including the same'2005 6,885,528'Magnetic sensing element having chromium layer between antiferromagnetic layers'2005 6,879,472'Exchange coupling film and electoresistive sensor using the same'2005 6,873,500'Exchange coupling film capable of improving playback characteristics'2005 6,867,952'Magnetic sensing element with ESD resistance improved by adjusting the lengths of antiferromagnetic layers and free layer in the height direction'2005 6,862,159'CPP MAGNETIC SENSING ELEMENT IN WHICH PINNED MAGNETIC LAYERS OF UPPER AND LOWER MULTILAYER FILMS ARE MAGNETIZED ANTIPARALLEL TO EACH OTHER, METHOD FOR MAKING THE SAME, AND MAGNETIC SENSING DEVICE INCLUDING THE SAME'2005 6,862,158'Exchange coupling film having improved wettability of seed layer'2005 6,856,494'Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers'2005 6,853,521'Exchange coupling film having improved wettability of seed layer'2005 6,847,508'Spin valve thin film magnetic element and thin film magnetic head'2005 6,844,998'Magnetoresistive sensor capable of narrowing gap and track width'2005 6,831,817'Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure'2004 6,807,034'Dual spin-valve CCP type thin-film magnetic element with multi free layers'2004 6,806,804'Magnetic detecting element having -values selected for free magnetic layer and pinned magnetic layer'2004 6,790,541'Exchange coupling film and electroresistive sensor using the same'2004 6,791,804'Magnetoresistive-effect device and method for manufacturing the same'2004 6,791,320'Magnetic detection device adapted to control magnetization of free magnetic layer by using antiferromagnetic layer, and manufacturing method for the same'2004 6,783,874'Magnetic sensor having second antiferromagnetic layers and two types of electrode layers on free magnetic layer and manufacturing method thereof'2004 6,764,778'Thin film magnetic element with accurately controllable track width and method of manufacturing the same'2004 6,760,200'Spin-valve thin-film magnetic element suitable for track narrowing and thin-film magnetic head using the same'2004 6,757,962'Method for manufacturing exchange bias type magnetic field sensing element'2004 6,756,135'Spin valve thin-film magnetic element'2004 6,751,073'Tunneling magnetoresistive element and method of manufacturing the same'2004 6,731,479'Spin-valve thin-film magnetic element with a ferromagnetic underlayer of hard bias'2004 6,714,388'Magnetic sensing element having improved magnetic sensitivity'2004 6,707,649'Magnetic sensing element permitting decrease in effective element size while maintaining large optical element size'2004 6,700,750'Spin-valve thin film element'2004 6,700,756'Spin-valve thin film magnetic element and method of manufacturing the same'2004 6,690,554'Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same'2004 6,678,128'Exchange coupling film and electroresistive sensor using the same'2004 6,648,985'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling'2003 6,646,835'Spin-valve magnetoresistive thin film element'2003 6,643,107'Spin valve thin film magnetic element and method of manufacturing the same'2003 6,639,764'Spin-valve magnetoresistive thin film element'2003 6,639,762'Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor'2003 6,635,366'Spin valve thin film magnetic element and thin film magnetic head'2003 6,628,483'Dual spin-valve magnetoresistive thin film element'2003 6,608,740'Spin-valve thin-film magnetic element provided with single free magnetic layer'2003 6,607,641'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film'2003 6,608,739'Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions'2003 6,597,542'Dual spin-valve magnetoresistive thin film element'2003 6,591,479'Production method for a spin-valve type magnetoresistive element'2003 6,587,316'Spin-valve type thin film magnetic element'2003 6,587,315'Magnetoresistive-effect device with a magnetic coupling junction'2003 6,586,121'Spin-valve thin-film magnetic element'2003 6,549,384'Spin-valve magnetoresistive thin film element'2003 6,538,858'Spin-valve thin film element and method of manufacturing the same'2003 6,504,688'Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same'2003 6,500,570'Spin-valve magnetoresistive element and method for making the same'2002 6,496,338'Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias'2002 6,424,506'Spin-valve magnetoresistive thin film element'2002 6,387,550'Giant magnetoresistive material film, method of producing the same and magnetic head using the same'2002 6,387,548'Exchange coupling film and magnetoresistance effect type element using this exchange coupling film, and thin film magnetic head using the magnetoresistance effect type element'2002 6,351,204'Thin magnetic element and transformer'2002 6,350,487'Spin-valve type thin film element and its manufacturing method'2002 6,340,520'Giant magnetoresistive material film, method of producing the same magnetic head using the same'2002 6,326,092'Magnetoresistance device and production method thereof'2001 6,301,089'Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer'2001 6,295,186'Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias'2001 6,292,334'Thin film magnetic head comprising shield layer having stabilized magnetic domain structure'2001 6,282,069'Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer'2001 6,221,172'Manufacturing method of spin-valve magnetoresistive thin film element'2001 6,210,810'Magnetoresistance device'2001 6,191,577'Magnetic sensor exhibiting large change in resistance at low external magnetic field'2001 6,178,071'Spin-valve type thin film element and its manufacturing method'2001 6,153,319'Spin-valve type thin film element'2000 6,140,902'Thin magnetic element and transformer'2000 6,139,908'Magnetoresistance device and production method thereof'2000 6,124,047'Soft magnetic film and a magnetic head of an MR/inductive composite type using such a soft magnetic film'2000 6,074,707'Method of producing magnetoresistive element'2000 6,055,135'Exchange coupling thin film and magnetoresistive element comprising the same'2000 5,910,344'Method of manufacturing a magnetoresistive sensor'1999 5,895,727'Magnetoresistive multilayer film'1999 5,891,586'Multilayer thin-film for magnetoresistive device'1999 5,858,125'Magnetoresistive materials'1999 5,833,770'High frequency soft magnetic alloy and plane magnetic element, antenna and wave absorber comprising the same'1998 5,795,663'Magnetoresistive multilayer film and methods of producing the same'1998 5,742,458'Giant magnetoresistive material film which includes a free layer, a pinned layer and a coercive force increasing layer'1998 5,688,380'Method of producing giant magnetoresistive material film and magnetic head'1997 5,585,984'Magnetic head'1996 5,176,806'Soft magnetic alloy film'1993 5,173,823'Magnetic head for magnetic recording apparatus using a soft magnetic alloy film consisting primarily of iron'1992 5,164,025'Soft magnetic alloy film and a magnetic head using such soft a magnetic alloy film'1992 5,104,464'Soft magnetic alloy film'1992 5,031,063'Magnetic head for use in a magnetic recording apparatus using a soft magnetic alloy film consisting primarily of cobalt'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2012Patents assigned to ALPS ELECTRIC CO LTD (159)· patent assignee history

1991–1993Based in Yunotani, JP· patent location history

1997–2012Based in Niigata, JP· patent location history

2007–2012Based in Tokyo, JP· patent location history

2007–2009Based in Niigaka-ken, JP· patent location history

2008–2012Patents assigned to TDK CORP (27)· patent assignee history

2012Patents assigned to HASEGAWA NAOYA (3)· patent assignee history

2012Patents assigned to KOBAYASHI HIDEKAZU (3)· patent assignee history

2012Patents assigned to NISHIMURA KAZUMASA (3)· patent assignee history

2020Based in Kuwana, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ALPS ELECTRIC CO LTD	159	1991–2012
TDK CORP	27	2008–2012
HASEGAWA NAOYAself	3	2012
KOBAYASHI HIDEKAZU	3	2012
NISHIMURA KAZUMASA	3	2012

Locations

Location	Patents	Span
Niigata, JP	173	1997–2012
Tokyo, JP	4	2007–2012
Yunotani, JP	4	1991–1993
Niigaka-ken, JP	3	2007–2009
Kuwana, JP	1	2020