LexDanaLexDanabeta
Inventor

Tetsuzo Ueda

Inventor
Osaka, JP

Overview

133→
Patents
1999–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 133 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light8%
H01LSemiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures5%
C30BSingle-crystal growth5%
C23CCoating metallic material2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
11,121,010Plasma processing apparatus202111,037,767Substrate support, substrate processing apparatus, substrate processing system, and method of detecting erosion of adhesive in substrate support202110,968,925Gas cylinder202110,529,841Field effect transistor202010,453,776Semiconductor device201910,355,143Nitride semiconductor device201910,249,748Nitride semiconductor device201910,128,363Field effect transistor20189,842,905'Semiconductor device and method for fabricating the same'20179,837,496Semiconductor device and method for manufacturing same20179,666,664'Semiconductor device'20179,595,606'Field-effect transistor'20179,484,342'Semiconductor apparatus'20169,406,668'Power semiconductor element'20169,401,403'Nitride semiconductor structure'20169,231,059'Semiconductor device and method of manufacturing the device'20169,190,474'Semiconductor device and method of manufacturing the device'20159,018,634'Semiconductor device'20158,890,210'Field effect transistor'20148,884,333'Nitride semiconductor device'20148,884,332'Nitride semiconductor device'20148,872,227'Nitride semiconductor device'20148,816,366'Nitride semiconductor device'20148,791,505'Semiconductor device'20148,779,438'Field-effect transistor with nitride semiconductor and method for fabricating the same'20148,748,995'Nitride semiconductor device with metal layer formed on active region and coupled with electrode interconnect'20148,748,941'Nitride semiconductor device having reduced interface leakage currents'20148,748,939'Transistor and method for manufacturing same'20148,742,467'Bidirectional switching device and bidirectional switching circuit using the same'20148,723,229'Semiconductor device and method of manufacturing the device'20148,716,753'Nitride semiconductor material, semiconductor element, and manufacturing method thereof'20148,692,292'Semiconductor device including separated gate electrode and conductive layer'20148,659,056'Heterojunction field-effect transistor with source electrode and insulator formed in semiconductor layer opening'20148,592,866'Transistor'20138,569,797'Field effect transistor and method of manufacturing the same'20138,513,694'Nitride semiconductor device and manufacturing method of the device'20138,450,146'Transistor assembly and method for manufacturing the same'20138,441,035'Field effect transistor and method of manufacturing the same'20138,390,029'Semiconductor device for reducing and/or preventing current collapse'20138,344,423'Nitride semiconductor device and method for fabricating the same'20138,283,677'Nitride semiconductor light-emitting device'20128,264,002'Field-effect transistor'20128,164,115'Nitride semiconductor device'20128,129,748'Nitride semiconductor device and method for fabricating the same'20128,101,972'Nitride semiconductor device and method for fabricating the same'20128,089,096'Field effect transistor with main surface including C-axis'20128,086,108'Optical transmission/reception device and optical communication system using the same'20118,076,698'Transistor and method for operating the same'20118,039,329'Field effect transistor having reduced contact resistance and method for fabricating the same'20118,013,320'Nitride semiconductor device and method for fabricating the same'20118,003,975'Semiconductor integrated circuit device and method for fabricating the same'20118,004,011'Field effect transistor'20117,974,322'Nitride semiconductor laser diode'20117,956,368'Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device'20117,956,383'Field effect transistor'20117,936,049'Nitride semiconductor device and manufacturing method thereof'20117,915,646'Nitride semiconductor material, semiconductor element, and manufacturing method thereof'20117,898,002'Nitride semiconductor device and method for fabricating the same'20117,873,090'Surface emitting laser, photodetector and optical communication system using the same'20117,863,649'Nitride semiconductor device and method for fabricating the same'20117,859,087'Semiconductor device'20107,842,532'Nitride semiconductor device and method for manufacturing the same'20107,838,904'Nitride based semiconductor device with concave gate region'20107,834,380'Field effect transistor and method for fabricating the same'20107,834,366'Semiconductor device having a group III nitride semiconductor layer'20107,826,512'Semiconductor laser device including transparent electrode'20107,825,434'Nitride semiconductor device'20107,816,707'Field-effect transistor with nitride semiconductor and method for fabricating the same'20107,800,116'Group III-nitride semiconductor device with a cap layer'20107,795,630'Semiconductor device with oxidized regions and method for fabricating the same'20107,786,491'Semiconductor light-emitting device comprising a plurality of semiconductor layers'20107,781,793'White light emitting element and white light source'20107,777,305'Nitride semiconductor device and manufacturing method thereof'20107,728,359'Nitride semiconductor based bipolar transistor and the method of manufacture thereof'20107,713,812'Method for manufacturing semiconductor thin film'20107,714,359'Field effect transistor having nitride semiconductor layer'20107,705,371'Field effect transistor having reduced contact resistance and method for fabricating the same'20107,700,392'Manufacturing method of semiconductor laser devices and manufacturing apparatus of the same'20107,687,828'Field-effect transistor'20107,664,151'Nitride semiconductor laser diode'20107,663,161'Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same'20107,656,010'Semiconductor device'20107,622,743'Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device'20097,595,544'Semiconductor device and manufacturing method thereof'20097,576,373'Nitride semiconductor device and method for manufacturing the same'20097,569,863'Semiconductor light emitting device'20097,550,821'Nitride semiconductor device'20097,538,357'Semiconductor light emitting device'20097,528,423'Semiconductor device'20097,518,153'Nitride semiconductor light emitting device'20097,508,001'Semiconductor laser device and manufacturing method thereof'20097,482,641'White light emitting element and white light source'20097,465,968'Semiconductor device and method for fabricating the same'20087,459,377'Method for dividing substrate'20087,459,719'Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer'20087,439,595'Field effect transistor having vertical channel structure'20087,435,995'Phosphor, semiconductor light emitting device, and fabrication method thereof'20087,435,994'Semiconductor device and method for fabricating the same'20087,425,732'Nitride semiconductor device'20087,411,232'Semiconductor photodetecting device and method of manufacturing the same'20087,391,798'Semiconductor laser device'20087,279,751'Semiconductor laser device and manufacturing method thereof'20077,268,370'Phosphor, semiconductor light emitting device, and fabrication method thereof'20077,244,628'Method for fabricating semiconductor devices'20077,217,960'Semiconductor device'20077,198,671'Layered substrates for epitaxial processing, and device'20077,173,277'Semiconductor light emitting device and method for fabricating the same'20077,153,715'Semiconductor device and method for fabricating the same'20067,148,149'Method for fabricating nitride-based compound semiconductor element'20067,133,431'Semiconductor laser device and method for fabricating the same'20067,091,524'Semiconductor device and method for fabricating the same'20067,008,839'Method for manufacturing semiconductor thin film'20066,919,641'Semiconductor device and method for fabricating the same'20056,887,770'Method for fabricating semiconductor device'20056,881,261'Method for fabricating semiconductor device'20056,861,335'Method for fabricating a semiconductor device that includes light beam irradiation to separate a semiconductor layer from a single crystal substrate'20056,797,532'Semiconductor device and method for manufacturing the same'20046,768,135'Dual process semiconductor heterostructures'20046,676,751'Epitaxial film produced by sequential hydride vapor phase epitaxy'20046,673,149'Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate'20046,566,256'Dual process semiconductor heterostructures and methods'20036,355,107'Compound gas injection system'20026,290,774'Sequential hydride vapor phase epitaxy'20016,197,441'Cubic nitride semiconductor device and fabrication method of the same'20016,190,629'Organic acid scrubber and methods'20016,179,913'Compound gas injection system and methods'20016,176,925'Detached and inverted epitaxial regrowth & methods'20016,168,659'Method of forming gallium nitride crystal'20016,159,287'Truncated susceptor for vapor-phase deposition'20006,139,628'Method of forming gallium nitride crystal'20006,117,213'Particle trap apparatus and methods'20006,030,886'Growth of GaN on a substrate using a ZnO buffer layer'20005,928,421'Method of forming gallium nitride crystal'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2007Based in Menlo Park, CA, US· patent location history
2001–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (28)· patent assignee history
2004–2020Based in Osaka, JP· patent location history
2007–2010Based in Toyonaka, JP· patent location history
2008–2020Patents assigned to PANASONIC CORP (83)· patent assignee history
2011–2014Patents assigned to UEDA TETSUZO (24)· patent assignee history
2011–2014Patents assigned to HIKITA MASAHIRO (14)· patent assignee history
2011Based in Okasa, JP· patent location history
2015–2019Patents assigned to PANASONIC IP MAN CO LTD (11)· patent assignee history
2021Based in Miyagi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
PANASONIC CORP832008–2020
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD282001–2008
UEDA TETSUZOself242011–2014
HIKITA MASAHIRO142011–2014
PANASONIC IP MAN CO LTD112015–2019
Locations
LocationPatentsSpan
Osaka, JP1042004–2020
Menlo Park, California, US171999–2007
Toyonaka, JP82007–2010
Miyagi, JP32021
Okasa, JP12011