Inventor

Steven G. Barbee

Inventor

Dover Plains, NY, US

Overview

1983–2015

Patent span

Physics

Primary field (CPC G)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%

B24BMachines, devices, or processes for grinding or polishing17%

G01BMeasuring length, thickness or similar linear dimensions11%

G01NInvestigating or analysing materials by determining their chemical or physical properties11%

C23CCoating metallic material9%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%

C23FNon-mechanical removal of metallic material from surface2%

G05BControl or regulating systems in general2%

G06FElectric digital data processing2%

H10DInorganic electric semiconductor devices2%

PatentTitleYear

9,189,543'Predicting service request breaches'2015 7,953,689'Combined feature creation to increase data mining signal in hybrid datasets'2011 7,895,168'Data mining using variable rankings and enhanced visualization methods'2011 7,502,658'Methods of fabricating optimization involving process sequence analysis'2009 6,989,683'Enhanced endpoint detection for wet etch process control'2006 6,899,784'Apparatus for detecting CMP endpoint in acidic slurries'2005 6,878,629'Method for detecting CMP endpoint in acidic slurries'2005 6,858,532'Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling'2005 6,843,880'Enhanced endpoint detection for wet etch process control'2005 6,291,351'Endpoint detection in chemical-mechanical polishing of cloisonne structures'2001 6,072,313'In-situ monitoring and control of conductive films by detecting changes in induced eddy currents'2000 5,788,801'Real time measurement of etch rate during a chemical etching process'1998 5,770,948'Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool'1998 5,731,697'In-situ monitoring of the change in thickness of films'1998 5,728,222'Apparatus for chemical vapor deposition of aluminum oxide'1998 5,663,637'Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool'1997 5,660,672'In-situ monitoring of conductive films on semiconductor wafers'1997 5,659,492'Chemical mechanical polishing endpoint process control'1997 5,648,113'Aluminum oxide LPCVD system'1997 5,644,221'Endpoint detection for chemical mechanical polishing using frequency or amplitude mode'1997 5,614,247'Apparatus for chemical vapor deposition of aluminum oxide'1997 5,582,746'Real time measurement of etch rate during a chemical etching process'1996 5,573,623'Apparatus for contactless real-time in-situ monitoring of a chemical etching process'1996 5,573,624'Chemical etch monitor for measuring film etching uniformity during a chemical etching process'1996 5,559,428'In-situ monitoring of the change in thickness of films'1996 5,540,777'Aluminum oxide LPCVD system'1996 5,516,399'Contactless real-time in-situ monitoring of a chemical etching'1996 5,501,766'Minimizing overetch during a chemical etching process'1996 5,500,073'Real time measurement of etch rate during a chemical etching process'1996 5,489,361'Measuring film etching uniformity during a chemical etching process'1996 5,480,511'Method for contactless real-time in-situ monitoring of a chemical etching process'1996 5,456,788'Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process'1995 5,451,289'Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint'1995 5,445,705'Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process'1995 5,392,124'Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control'1995 5,386,121'In situ, non-destructive CVD surface monitor'1995 5,381,234'Method and apparatus for real-time film surface detection for large area wafers'1995 5,338,390'Contactless real-time in-situ monitoring of a chemical etching process'1994 5,220,405'Interferometer for in situ measurement of thin film thickness changes'1993 5,134,963'LPCVD reactor for high efficiency, high uniformity deposition'1992 4,781,970'Strengthening a ceramic by post sinter coating with a compressive surface layer'1988 4,717,596'Method for vacuum vapor deposition with improved mass flow control'1988 4,640,221'Vacuum deposition system with improved mass flow control'1987 4,400,715'Thin film semiconductor device and method for manufacture'1983

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1983–2015Patents assigned to IBM (43)· patent assignee history

1983–2009Based in Dover Plains, NY, US· patent location history

1996–1998Based in Dutchess County, NY, US· patent location history

2001–2015Based in Amenia, NY, US· patent location history

2005Patents assigned to ECOPHYSICS AG (1)· patent assignee history

2015Patents assigned to BADHE YOGESH P (1)· patent assignee history

2015Patents assigned to BARBEE STEVEN G (1)· patent assignee history

2015Patents assigned to STARK GEORGE E (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	43	1983–2015
BADHE YOGESH P	1	2015
BARBEE STEVEN Gself	1	2015
ECOPHYSICS AG	1	2005
STARK GEORGE E	1	2015

Locations

Location	Patents	Span
Dover Plains, New York, US	31	1983–2009
Amenia, New York, US	9	2001–2015
Dutchess County, New York, US	4	1996–1998