Inventor
Maxime Darnon
Inventor
Grenoble, FR
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H01LSemiconductor devices15%
B82YSpecific uses or applications of nanostructures5%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds3%
C08LCompositions of macromolecular compounds3%
C23CCoating metallic material3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
10,319,870Photovoltaic module with a controllable infrared protection layer201910,056,266Method for manufacturing a resistive device for a memory or logic circuit20189,123,652'Multi-level autolimitating etching method'20159,059,249'Interconnect structures containing a photo-patternable low-k dielectric with a curved sidewall surface'20158,956,886'Embedded test structure for trimming process control'20158,952,539'Methods for fabrication of an air gap-containing interconnect structure'20158,896,120'Structures and methods for air gap integration'20148,853,856'Methodology for evaluation of electrical characteristics of carbon nanotubes'20148,828,749'Methodology for evaluation of electrical characteristics of carbon nanotubes'20148,642,252'Methods for fabrication of an air gap-containing interconnect structure'20148,637,395'Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer'20148,629,561'Air gap-containing interconnect structure having photo-patternable low k material'20148,546,263'Method of patterning of magnetic tunnel junctions'20138,475,667'Method of patterning photosensitive material on a substrate containing a latent acid generator'20138,449,781'Selective etch back process for carbon nanotubes intergration'20138,298,937'Interconnect structure fabricated without dry plasma etch processing'20128,241,992'Method for air gap interconnect integration using photo-patternable low k material'20128,183,694'Reversing tone of patterns on integrated circuit and nanoscale fabrication'20127,939,446'Process for reversing tone of patterns on integerated circuit and structural process for nanoscale fabrication'20117,790,601'Forming interconnects with air gaps'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2019Patents assigned to IBM (16)· patent assignee history
2010–2014Based in Yorktown Heights, NY, US· patent location history
2011–2015Based in Grenoble, FR· patent location history
2012–2019Patents assigned to DARNON MAXIME (14)· patent assignee history
2012–2015Patents assigned to LIN QINGHUANG (10)· patent assignee history
2012–2019Patents assigned to CLEVENGER LAWRENCE A (6)· patent assignee history
2012–2014Patents assigned to LISI ANTHONY D (5)· patent assignee history
2012–2019Based in White Plains, NY, US· patent location history
2015Based in Gieres, FR· patent location history
2018Based in Pavezin, FR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 16 | 2010–2019 |
| DARNON MAXIMEself | 14 | 2012–2019 |
| LIN QINGHUANG | 10 | 2012–2015 |
| CLEVENGER LAWRENCE A | 6 | 2012–2019 |
| LISI ANTHONY D | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Grenoble, FR | 7 | 2011–2015 |
| White Plains, New York, US | 5 | 2012–2019 |
| Yorktown Heights, New York, US | 5 | 2010–2014 |
| Pavezin, FR | 1 | 2018 |
| Gieres, FR | 1 | 2015 |