Inventor
Hirokazu Sekine
Inventor
Fujisawa, JP
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation35%
H04NPictorial communication, e.g. television27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H01LSemiconductor devices6%
H10DInorganic electric semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G02BOptical elements, systems or apparatus2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
G06FElectric digital data processing2%
G06TImage data processing or generation, in general2%
PatentTitleYear
10,157,945Solid-state imaging device and method for manufacturing the same201810,008,521Solid-state imaging device20189,924,076'Motion detection solid-state image capturing device and motion detection system'20188,890,991'Solid-state image pickup device and system having photodiodes of varying sizes and sensitivities in each unity cell to detect movement of a subject'20148,801,304'Camera module and method for manufacturing camera module'20148,754,494'Image sensing device including through vias electrically connecting imaging lens unit to image sensors'20148,754,974'Solid-state imaging device'20148,649,072'Imaging system, solid-state imaging device for the imaging system, and method for manufacturing the solid-state imaging device for the imaging system'20148,519,457'Solid-state image pickup device and a camera module'20137,864,236'CMOS image sensor'20117,864,298'Stage apparatus and exposure apparatus with heating-and-cooling unit to change shape of mirror'20117,838,344'Method for manufacturing a charge coupled device'20107,593,049'CMOS image sensor'20097,561,198'CMOS image sensor'20097,429,722'Pattern layout of CMOS image sensor'20086,674,094'CMOS image sensor'20046,429,038'Solid-state imaging device and method of manufacturing the same'20025,793,071'Solid-State imaging device'19985,734,178'Imaging system using area sensor'19985,194,724'Solid-state imaging device having signal transferring groups formed of a CCD register and two pixel trains'19934,649,408'Charge storage type semiconductor device and method for producing same'19874,602,289'Solid state image pick-up device'19864,336,556'Solid-state image pick-up device'1982Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1982–1987Patents assigned to TOKYO SHIBAURA ELECTRIC CO (3)· patent assignee history
1982–2014Based in Fujisawa, JP· patent location history
1986Based in Yokohama, JP· patent location history
1993–2014Patents assigned to TOSHIBA KK (16)· patent assignee history
2004–2018Based in Kanagawa, JP· patent location history
2011Based in Utsunomiya, JP· patent location history
2013–2014Patents assigned to SEKINE HIROKAZU (6)· patent assignee history
2013Patents assigned to ASHINO MASANORI (1)· patent assignee history
2018Patents assigned to SETECH CO LTD (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 16 | 1993–2014 |
| SEKINE HIROKAZUself | 6 | 2013–2014 |
| SETECH CO LTD | 3 | 2018 |
| TOKYO SHIBAURA ELECTRIC CO | 3 | 1982–1987 |
| ASHINO MASANORI | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fujisawa, JP | 11 | 1982–2014 |
| Kanagawa, JP | 10 | 2004–2018 |
| Utsunomiya, JP | 1 | 2011 |
| Yokohama, JP | 1 | 1986 |