Inventor
Yun-Heub Song
Inventor
Gyeonggi-do, KR
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices32%
H10DInorganic electric semiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H01LSemiconductor devices12%
G11CStatic stores6%
H10NElectric solid-state devices not otherwise provided for6%
G06NComputing arrangements based on specific computational models3%
PatentTitleYear
10,014,348Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same20189,922,990'Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor'20189,136,359'Three-dimensional flash memory using fringing effect and method for manufacturing'20159,099,637'Phase change memory and method of fabricating the phase change memory'20158,354,708'Methods of forming and operating semiconductor device'20138,222,684'Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured thereby'20127,928,501'Semiconductor device and methods of forming and operating the same'20117,588,979'Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby'20097,436,017'Semiconductor integrated circuit using a selective disposable spacer'20087,045,413'Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby'20066,791,196'Semiconductor devices with bonding pads having intermetal dielectric layer of hybrid configuration and methods of fabricating the same'20046,635,532'Method for fabricating NOR type flash memory device'20036,507,522'Method for erasing memory cells in a nonvolatile memory'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2013Patents assigned to SAMSUNG ELECTRONICS CO LTD (9)· patent assignee history
2003Based in Kyungki-do, KR· patent location history
2004Based in Kyunggi, KR· patent location history
2006–2018Based in Gyeonggi-do, KR· patent location history
2011–2013Patents assigned to SEOUL NAT UNIV IND FOUNDATION (2)· patent assignee history
2011–2018Based in Seongnam-si, KR· patent location history
2012–2013Patents assigned to SONG YUN-HEUB (2)· patent assignee history
2015Patents assigned to INTELLECTUAL DISCOVERY CO LTD (1)· patent assignee history
2015Based in Seoul, KR· patent location history
2018Patents assigned to UNIV HANYANG IND UNIV COOP FOUND (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 9 | 2003–2013 |
| SEOUL NAT UNIV IND FOUNDATION | 2 | 2011–2013 |
| SONG YUN-HEUBself | 2 | 2012–2013 |
| UNIV HANYANG IND UNIV COOP FOUND | 2 | 2018 |
| INTELLECTUAL DISCOVERY CO LTD | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 5 | 2006–2018 |
| Seongnam-si, KR | 4 | 2011–2018 |
| Seoul, KR | 1 | 2015 |
| Kyunggi, KR | 1 | 2004 |
| Kyungki-do, KR | 1 | 2003 |