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Inventor

Qingqing Liang

Inventor
Lagrangeville, NY, US

Overview

135→
Patents
2010–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 135 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10BElectronic memory devices3%
G11CStatic stores2%
B82YSpecific uses or applications of nanostructures1%
G06FElectric digital data processing1%
H01GCapacitors1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,896,958Silicon-on-insulator backside contacts202110,840,387Buried oxide transcap devices202010,840,383Non-volatile memory (NVM) structure with front and back gates202010,748,934Silicon on insulator with multiple semiconductor thicknesses using layer transfer202010,707,866Capacitance balance in dual sided contact switch202010,622,492Variable capacitor flat-band voltage engineering202010,615,294Variable capacitor202010,608,124Back silicided variable capacitor devices202010,600,910High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology202010,522,626Silicon-on-insulator backside contacts201910,424,641Lateral devices in silicon-on-insulator (SOI) technology201910,418,465Non-volatile memory structure in silicon-on-insulator (SOI) technology201910,355,134Metal-oxide semiconductor (MOS) device with thick oxide201910,340,395Semiconductor variable capacitor using threshold implant region201910,269,919Semiconductor device structure and method for fabricating the same201910,211,347Transcap device architecture with reduced control voltage and improved quality factor201910,181,533Transcap manufacturing techniques without a silicide-blocking mask201910,128,351Semiconductor devices having a gate conductor and methods of manufacturing the same201810,096,717MOSFET and method for manufacturing the same201810,008,602Semiconductor devices and methods for manufacturing the same20189,985,145Variable capacitor structures with reduced channel resistance20189,899,270'Methods for manufacturing semiconductor devices'20189,882,066'Transcap manufacturing techniques without a silicide-blocking mask'20189,853,153Method of manufacturing fin field effect transistor20179,806,169'Semiconductor devices having a gate stack'20179,716,175'Quasi-nanowire transistor and method of manufacturing the same'20179,711,612'Semiconductor device structure and method for fabricating the same'20179,653,358'Semiconductor device structure and method for manufacturing the same'20179,633,854'MOSFET and method for manufacturing the same'20179,607,877'Substrate structure, semiconductor device, and method for manufacturing the same'20179,583,593'FinFET and method of manufacturing the same'20179,583,622'Semiconductor structure and method for manufacturing the same'20179,425,288'Method of manufacturing semiconductor device'20169,419,108'Semiconductor structure and method for manufacturing the same'20169,397,007'Method for manufacturing semiconductor structure through forming an additional layer inside opening of a photoresist layer'20169,397,104'SRAM cell and method for manufacturing the same'20169,379,056'Semiconductor structure and method for manufacturing the same'20169,349,867'Semiconductor devices and methods for manufacturing the same'20169,331,182'Semiconductor devices with a gate conductor formed as a spacer, and methods for manufacturing the same'20169,312,361'Semiconductor devices and methods for manufacturing the same'20169,306,016'Semiconductor device and method for manufacturing the same'20169,293,377'Semiconductor device structure and method for manufacturing the same'20169,263,581'Semiconductor structure and method for manufacturing the same'20169,252,280'MOSFET and method for manufacturing the same'20169,214,400'Semiconductor device with back gate isolation regions and method for manufacturing the same'20159,196,541'SRAM cell and method for manufacturing the same'20159,196,706'Method for manufacturing P-type MOSFET'20159,178,070'Semiconductor structure and method for manufacturing the same'20159,147,745'Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same'20159,117,926'Semiconductor devices and methods for manufacturing the same'20159,093,374'Field effect transistor having an asymmetric gate electrode'20159,087,691'Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same'20159,070,719'Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin'20159,064,954'Semiconductor devices and methods for manufacturing the same'20159,059,040'Structure and method for reducing floating body effect of SOI MOSFETS'20159,054,221'Semiconductor device with a common back gate isolation region and method for manufacturing the same'20159,048,286'Substrate for integrated circuit and method for forming the same'20159,024,435'Semiconductor device, formation method thereof, and package structure'20159,018,739'Semiconductor device and method of fabricating the same'20159,012,272'MOSFET and method for manufacturing the same'20159,013,918'Two-terminal memory cell and semiconductor memory device based on different states of stable current'20159,012,963'Semiconductor device'20158,987,136'Semiconductor device and method for manufacturing local interconnect structure thereof'20158,975,700'Semiconductor device having a trench isolation structure'20158,952,453'MOSFET formed on an SOI wafer with a back gate'20158,936,988'Methods for manufacturing a MOSFET using a stress liner of diamond-like carbon on the substrate'20158,933,512'MOSFET and method for manufacturing the same'20158,933,504'Semiconductor structure and method for forming the semiconductor structure'20158,895,403'Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor'20148,859,378'Fin field-effect transistor and method for manufacturing the same'20148,846,488'Semiconductor device and method for manufacturing the same'20148,816,392'Semiconductor device having gate structures to reduce the short channel effects'20148,815,660'Structure and method for reducing floating body effect of SOI MOSFETs'20148,809,955'Semiconductor structure and method for manufacturing the same'20148,796,771'Creating anisotropically diffused junctions in field effect transistor devices'20148,779,514'Transistor and method for manufacturing the same'20148,766,378'Programmable FETs using Vt-shift effect and methods of manufacture'20148,766,371'Semiconductor structure and method for manufacturing the same'20148,759,923'Semiconductor device structure and method for manufacturing the same'20148,748,983'Embedded source/drain MOS transistor'20148,716,095'Manufacturing method of gate stack and semiconductor device'20148,716,799'MOSFET'20148,716,800'Semiconductor structure and method for manufacturing the same'20148,703,558'Graphene device and method for manufacturing the same'20148,691,641'Method for manufacturing semiconductor device'20148,686,534'Trench isolation structure and method for forming the same'20148,673,704'FinFET and method for manufacturing the same'20148,673,701'Semiconductor structure and method for manufacturing the same'20148,658,507'MOSFET structure and method of fabricating the same using replacement channel layer'20148,652,884'Semiconductor device structure and method for manufacturing the same'20148,642,433'Method for manufacturing semiconductor device'20148,637,935'Semiconductor device including embedded isolation regions and method for forming the same'20148,633,096'Creating anisotropically diffused junctions in field effect transistor devices'20148,624,315'Field effect transistor having an asymmetric gate electrode'20148,610,248'Capacitor structure and method of manufacture'20138,598,662'Semiconductor device and method for forming the same'20138,592,911'Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the same'20138,587,066'Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)'20138,557,677'Stack-type semiconductor device and method for manufacturing the same'20138,525,188'Shallow trench isolation structure and method for forming the same'20138,513,742'Method for manufacturing contact and semiconductor device having said contact'20138,513,085'Structure and method to improve threshold voltage of MOSFETs including a high k dielectric'20138,513,780'Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same'20138,492,247'Programmable FETs using Vt-shift effect and methods of manufacture'20138,492,842'Method for forming retrograded well for MOSFET'20138,492,210'Transistor, semiconductor device comprising the transistor and method for manufacturing the same'20138,492,206'Semiconductor device structure and method for manufacturing the same'20138,481,379'Method for manufacturing fin field-effect transistor'20138,466,500'Semiconductor device and method for manufacturing the same'20138,460,988'Method for manufacturing semiconductor device'20138,456,169'High speed measurement of random variation/yield in integrated circuit device testing'20138,455,323'Method for manufacturing semiconductor wafer'20138,440,532'Structure and method for making metal semiconductor field effect transistor (MOSFET) with isolation last process'20138,441,045'Semiconductor device and method for manufacturing the same'20138,426,920'MOSFET and method for manufacturing the same'20138,420,492'MOS transistor and method for forming the same'20138,410,609'Semiconductor device having carbon nanotube interconnects contact deposited with different orientation and method for manufacturing the same'20138,367,490'Semiconductor structure and method for manufacturing the same'20138,343,818'Method for forming retrograded well for MOSFET'20138,278,721'Contact hole, semiconductor device and method for forming the same'20128,269,307'Shallow trench isolation structure and method for forming the same'20128,173,531'Structure and method to improve threshold voltage of MOSFETS including a high K dielectric'20128,169,026'Stress-induced CMOS device'20128,138,029'Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)'20128,110,465'Field effect transistor having an asymmetric gate electrode'20128,105,887'Inducing stress in CMOS device'20127,897,468'Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded island'20117,880,238'2-T SRAM cell structure and method'20117,863,143'High performance schottky-barrier-source asymmetric MOSFETs'20117,838,913'Hybrid FET incorporating a finFET and a planar FET'20107,829,939'MOSFET including epitaxial halo region'20107,820,530'Efficient body contact field effect transistor with reduced body resistance'20107,813,162'SRAM cell having asymmetric pass gates'20107,670,896'Method and structure for reducing floating body effects in MOSFET devices'20107,646,039'SOI field effect transistor having asymmetric junction leakage'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2019Based in Lagrangeville, NY, US· patent location history
2010–2015Based in Fishkill, NY, US· patent location history
2011–2012Based in Hopewell Junction, NY, US· patent location history
2012–2018Patents assigned to LIANG QINGQING (88)· patent assignee history
2012–2019Patents assigned to INST OF MICROELECTRONICS CAS (85)· patent assignee history
2012–2018Patents assigned to ZHU HUILONG (59)· patent assignee history
2012–2017Patents assigned to ZHONG HUICAI (45)· patent assignee history
2012–2018Patents assigned to YIN HAIZHOU (34)· patent assignee history
2012–2017Based in Beijing, CN· patent location history
2018–2021Based in San Diego, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LIANG QINGQINGself882012–2018
INST OF MICROELECTRONICS CAS852012–2019
ZHU HUILONG592012–2018
ZHONG HUICAI452012–2017
YIN HAIZHOU342012–2018
Locations
LocationPatentsSpan
Lagrangeville, New York, US612010–2019
Beijing, CN312012–2017
Fishkill, New York, US192010–2015
San Diego, California, US182018–2021
Hopewell Junction, New York, US42011–2012