Inventor
Doo-Hwan Park
Inventor
Yongin-si, KR
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for32%
H10BElectronic memory devices31%
G11CStatic stores8%
H01LSemiconductor devices8%
H10DInorganic electric semiconductor devices8%
C04BLime, magnesia5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
A61JContainers specially adapted for medical or pharmaceutical purposes2%
H05BElectric heating2%
PatentTitleYear
10,847,454Semiconductor devices202010,510,658Semiconductor devices20199,196,827'Non-volatile memory devices having dual heater configurations and methods of fabricating the same'20158,884,263'Non-volatile memory device having conductive buffer pattern and method of fabricating the same'20148,872,148'Phase-change memory devices'20148,790,976'Method of forming semiconductor device having self-aligned plug'20148,785,213'Method of fabricating non-volatile memory device having small contact and related devices'20148,680,500'Phase change memory devices having buried metal silicide patterns'20148,600,549'Automatic drug dispensing and dosing time reminder device'20138,557,627'Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same'20138,551,805'Methods of manufacturing phase-change memory devices'20138,513,136'Memory devices and method of manufacturing the same'20138,507,353'Method of forming semiconductor device having self-aligned plug'20138,445,354'Methods for manufacturing a phase-change memory device'20138,237,141'Non-volatile memory device including phase-change material'20128,133,429'Methods for manufacturing a phase-change memory device'20128,133,757'Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current'20128,039,829'Contact structure, a semiconductor device employing the same, and methods of manufacturing the same'20118,012,789'Nonvolatile memory device and method of manufacturing the same'20117,817,464'Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same'20107,791,932'Phase-change material layer and phase-change memory device including the phase-change material layer'20107,727,458'Method of forming a chalcogenide compound target'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (21)· patent assignee history
2010–2013Based in Gyeonggi-do, KR· patent location history
2010–2012Based in Seoul, KR· patent location history
2012–2015Patents assigned to PARK DOO-HWAN (13)· patent assignee history
2012–2013Patents assigned to HA YONG-HO (3)· patent assignee history
2012–2020Based in Yongin-si, KR· patent location history
2013–2015Patents assigned to OH GYU-HWAN (9)· patent assignee history
2013–2014Patents assigned to CHUNG KYUNG-MIN (3)· patent assignee history
2013Based in Busan, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 21 | 2010–2020 |
| PARK DOO-HWANself | 13 | 2012–2015 |
| OH GYU-HWAN | 9 | 2013–2015 |
| CHUNG KYUNG-MIN | 3 | 2013–2014 |
| HA YONG-HO | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 13 | 2012–2020 |
| Gyeonggi-do, KR | 4 | 2010–2013 |
| Seoul, KR | 4 | 2010–2012 |
| Busan, KR | 1 | 2013 |