Inventor
Assaf Lahav
Inventor
Binyamina, IL
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation32%
H04NPictorial communication, e.g. television28%
H01LSemiconductor devices24%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes4%
G11CStatic stores4%
H10BElectronic memory devices4%
H10DInorganic electric semiconductor devices4%
PatentTitleYear
10,210,526Image sensor module and a method for evaluating an image sensor20199,865,632'Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate'20189,865,640'Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS'20189,729,810'Image sensor pixel with memory node having buried channel and diode portions'20179,356,169'Apparatus, system and method of back side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) pixel array'20169,231,020'Device and method of gettering on silicon on insulator (SOI) substrate'20169,210,345'Shared readout low noise global shutter image sensor method'20159,160,956'Shared readout low noise global shutter image sensor'20158,279,328'CMOS image sensor with wide (intra-scene) dynamic range'20128,089,035'CMOS image sensor with high sensitivity wide dynamic range pixel for high resolution applications'20127,773,138'Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme'20107,754,564'Method for fabricating three-dimensional control-gate architecture for single poly EPROM memory devices in planar CMOS technology'20107,749,874'Deep implant self-aligned to polysilicon gate'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2019Patents assigned to TOWER SEMICONDUCTOR LTD (13)· patent assignee history
2010Based in Migdal Haemek, IL· patent location history
2012–2016Patents assigned to LAHAV ASSAF (3)· patent assignee history
2012Patents assigned to FENIGSTEIN AMOS (2)· patent assignee history
2012–2019Based in Binyamina, IL· patent location history
2016Patents assigned to KATZ OMER (1)· patent assignee history
2019Patents assigned to HILLBERRY GAT LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOWER SEMICONDUCTOR LTD | 13 | 2010–2019 |
| LAHAV ASSAFself | 3 | 2012–2016 |
| FENIGSTEIN AMOS | 2 | 2012 |
| HILLBERRY GAT LTD | 1 | 2019 |
| KATZ OMER | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Binyamina, IL | 10 | 2012–2019 |
| Migdal Haemek, IL | 3 | 2010 |