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Inventor

Madan Biswal

Inventor
Puyallup, WA, US

Overview

4→
Patents
1992–1997
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
5,661,046'Method of fabricating BiCMOS device'19975,338,696'Method of fabricating BiCMOS device'19945,338,694'Method of fabricating BiCMOS device'19945,139,961'Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–1997Patents assigned to NAT SEMICONDUCTOR CORP (4)· patent assignee history
1992–1997Based in Puyallup, WA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NAT SEMICONDUCTOR CORP41992–1997
Locations
LocationPatentsSpan
Puyallup, Washington, US41992–1997