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Inventor

Bernie Roque, Jr.

Inventor
Williston, VT, US

Overview

2→
Patents
2007–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
PatentTitleYear
8,709,887'Method for fabricating a nitrided silicon-oxide gate dielectric'20147,291,568'Method for fabricating a nitrided silicon-oxide gate dielectric'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2014Patents assigned to IBM (2)· patent assignee history
2007–2014Based in Williston, VT, US· patent location history
2014Patents assigned to BURNHAM JAY S (1)· patent assignee history
2014Patents assigned to NAKOS JAMES S (1)· patent assignee history
2014Patents assigned to QUINLIVAN JAMES J (1)· patent assignee history
2014Patents assigned to ROQUE JR BERNIE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM22007–2014
BURNHAM JAY S12014
NAKOS JAMES S12014
QUINLIVAN JAMES J12014
ROQUE JR BERNIEself12014
Locations
LocationPatentsSpan
Williston, VT, US22007–2014