Inventor

Kazuhiko Itaya

Inventor

Yokohama, JP

Overview

1990–2017

Patent span

Electricity

Primary field (CPC H)

Patents· 73 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light15%

H03HImpedance networks, e.g. resonant circuits9%

H10HInorganic light-emitting semiconductor devices having potential barriers9%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

H01LSemiconductor devices6%

H10DInorganic electric semiconductor devices6%

B82YSpecific uses or applications of nanostructures5%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems4%

H01HElectric switches4%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

PatentTitleYear

9,698,482'Antenna device'2017 9,490,237'Semiconductor package including a plurality of chips'2016 9,406,622'Electronic circuit and semiconductor component'2016 9,299,627'Semiconductor package having a cap unit with concave portion and method of manufacturing the same'2016 9,284,186'Semiconductor device and method of manufacturing the same'2016 9,153,680'Stimulated phonon emission device and oscillator, frequency filter, cooling device, light-receiving device, and light-emitting device comprising the stimulated phonon emission device'2015 9,117,931'Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal'2015 9,112,475'EBG structure and circuit board'2015 9,041,182'Semiconductor package and method of manufacturing the same'2015 9,019,032'EBG structure, semiconductor device, and printed circuit board'2015 8,980,697'Method of fabricating chip scale package'2015 8,951,905'Semiconductor device and production method thereof'2015 8,746,857'Inkjet recording head'2014 8,648,431'Acoustic semiconductor device'2014 8,513,715'Semiconductor device'2013 8,324,707'Power amplifier'2012 8,305,147'Power amplifier'2012 8,189,319'MEMS variable capacitor having a piezoelectric actuation mechanism based on a piezoelectric thin film'2012 8,041,534'Sensor device, and sensor system and electronic device using the sensor device'2011 8,039,873'Semiconductor device'2011 8,008,760'Integrated semiconductor device'2011 7,937,056'Variable capacitance device and portable phone'2011 7,906,823'MEMS apparatus and method of manufacturing the same'2011 7,893,525'Semiconductor device having an adhesive portion with a stacked structure and method for manufacturing the same'2011 7,875,481'Semiconductor apparatus and method for manufacturing the same'2011 7,876,105'Sensor device and display apparatus'2011 7,851,833'Semiconductor device'2010 7,830,068'Actuator and electronic hardware using the same'2010 7,812,620'Sensor device, and portable communiction terminal and electronic device using the sensor device'2010 7,777,592'Antenna sharing device and portable telephone'2010 7,770,274'Piezoelectric thin film device and method for manufacturing the same'2010 7,732,990'Piezoelectric driven MEMS device'2010 7,709,999'Thin film piezoelectric resonator and method of manufacturing the same'2010 7,705,611'Sensor device, and portable communication terminal and electronic device using the sensor device'2010 7,619,470'Power amplifier'2009 7,583,149'Power supply apparatus, amplifier apparatus, radio apparatus and reproducing apparatus'2009 7,560,853'Thin film piezoelectric resonator, method of manufacturing the same, and filter including the same'2009 7,525,399'Thin-film piezoelectric resonator, filter and voltage-controlled oscillator'2009 7,508,268'Power amplifier and transmission and reception system'2009 7,501,739'Thin film piezoelectric resonator and manufacturing process thereof'2009 7,498,904'Piezoelectric thin film resonator and devices provided with the same'2009 7,463,117'Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR'2008 7,420,320'Piezoelectric thin film device and method for manufacturing the same'2008 7,323,805'Piezoelectric thin film device and method for manufacturing the same'2008 7,268,647'Film bulk acoustic-wave resonator and method for manufacturing the same'2007 7,221,920'Voltage controlled oscillator, frequency synthesizer and communication apparatus'2007 7,187,253'Film bulk acoustic-wave resonator and method for manufacturing the same'2007 6,303,405'Semiconductor light emitting element, and its manufacturing method'2001 6,252,894'Semiconductor laser using gallium nitride series compound semiconductor'2001 6,204,084'Nitride system semiconductor device and method for manufacturing the same'2001 6,147,364'Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan'2000 6,067,309'Compound semiconductor light-emitting device of gallium nitride series'2000 5,998,810'Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer'1999 5,932,896'Nitride system semiconductor device with oxygen'1999 5,903,017'Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN'1999 5,786,606'Semiconductor light-emitting device'1998 5,780,873'Semiconductor device capable of easily forming cavity and its manufacturing method'1998 5,740,192'Semiconductor laser'1998 5,466,950'Semiconductor light emitting device with short wavelength light selecting means'1995 5,459,746'Surface emission type semiconductor light-emitting device'1995 5,410,159'Light-emitting diode'1995 5,389,800'Semiconductor light-emitting device'1995 5,343,486'Semiconductor laser device'1994 5,321,712'Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound'1994 5,305,341'Semiconductor laser whose active layer has an ordered structure'1994 5,282,218'Semiconductor laser device'1994 5,181,218'Manufacturing method of semiconductor laser with non-absorbing mirror structure'1993 5,153,889'Semiconductor light emitting device'1992 5,138,404'Semiconductor device for passing current between a GaAs layer and an InGaAlP layer'1992 5,036,521'Semiconductor laser device'1991 5,023,880'Semiconductor laser device'1991 4,987,096'Manufacturing method of semiconductor laser with non-absorbing mirror structure'1991 4,893,313'Semiconductor laser device which has a double-hetero structure having an optimal layer thickness'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2017Patents assigned to TOSHIBA KK (73)· patent assignee history

1990–2009Based in Tokyo, JP· patent location history

1994–2017Based in Yokohama, JP· patent location history

1995–2016Based in Kanagawa, JP· patent location history

1995Based in Goleta, CA, US· patent location history

2012–2016Patents assigned to ITAYA KAZUHIKO (10)· patent assignee history

2012–2015Patents assigned to ABE KAZUHIDE (6)· patent assignee history

2012–2015Patents assigned to SASAKI TADAHIRO (5)· patent assignee history

2012–2015Patents assigned to IIDA ATSUKO (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	73	1990–2017
ITAYA KAZUHIKOself	10	2012–2016
ABE KAZUHIDE	6	2012–2015
SASAKI TADAHIRO	5	2012–2015
IIDA ATSUKO	4	2012–2015

Locations

Location	Patents	Span
Yokohama, JP	38	1994–2017
Kanagawa, JP	21	1995–2016
Tokyo, JP	11	1990–2009
Goleta, California, US	3	1995