Inventor
Andreas Meiser
Inventor
Sauerlach, DE
Overview
Patents· 146 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H03KPulse technique3%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
H02HEmergency protective circuit arrangements1%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
H05BElectric heating1%
G01RMeasuring electric variables1%
PatentTitleYear
11,121,220Semiconductor device including trench structures and manufacturing method202111,069,782Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device202111,031,494Silicon carbide semiconductor device having a gate electrode formed in a trench structure202111,031,466Method of forming oxygen inserted Si-layers in power semiconductor devices202111,018,244Lateral trench transistor device202111,011,606Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component202110,985,245Semiconductor device with planar field effect transistor cell202110,985,248SiC power semiconductor device with integrated Schottky junction202110,964,808Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure202110,903,322SiC power semiconductor device with integrated body diode202110,903,079Method for forming complementary doped semiconductor regions in a semiconductor body202110,868,146Method for producing a semiconductor device having a superjunction structure, first and second trenches and a trench structure in the second trench202010,868,172Vertical power devices with oxygen inserted Si-layers202010,845,428Method and circuit for detecting a loss of a bondwire in a power switch202010,790,353Semiconductor device with superjunction and oxygen inserted Si-layers202010,741,638Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices202010,734,484Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions202010,700,061Semiconductor device comprising a first transistor and a second transistor202010,629,690Semiconductor device comprising a transistor including a first field plate and a second field plate202010,586,851Silicon carbide semiconductor device and method of manufacturing202010,580,888Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices202010,582,580Switch comprising a field effect transistor and integrated circuit202010,553,675Isolation of semiconductor device with buried cavity202010,546,920Semiconductor device having a buried layer202010,510,836Gate trench device with oxygen inserted si-layers201910,483,360Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device201910,453,915Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method201910,439,030Semiconductor device having a channel region patterned into a ridge by adjacent gate trenches201910,381,477Power transistor having perpendicularly-arranged field plates and method of manufacturing the same201910,381,475Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit201910,355,087Semiconductor device including a transistor with a gate dielectric having a variable thickness201910,277,219Electronic switching and reverse polarity protection circuit201910,246,325MEMS device and method for manufacturing a MEMS device201910,205,019Semiconductor device having a fin at a side of a semiconductor body201910,205,016Method for manufacturing an integrated circuit including a lateral trench transistor and a logic circuit element201910,170,615Semiconductor device including a lateral transistor201910,128,750Switched-mode power converter with an inductive storage element and a cascode circuit201810,109,734Semiconductor device comprising a transistor201810,084,441Electronic switching and reverse polarity protection circuit201810,079,284Method of manufacturing a semiconductor structure and semiconductor device201810,032,878Semiconductor device with a semiconductor via and laterally connected electrode201810,002,959Semiconductor device comprising a temperature sensor, temperature sensor and method of manufacturing a semiconductor device comprising a temperature sensor20189,985,126Semiconductor device comprising a first gate electrode and a second gate electrode20189,960,156Integrated semiconductor device having a level shifter20189,953,968Integrated circuit having an ESD protection structure and photon source20189,947,648Semiconductor device including a diode at least partly arranged in a trench20189,941,349Superjunction semiconductor device with oppositely doped semiconductor regions formed in trenches20189,935,055Methods of manufacturing a semiconductor device by forming a separation trench20189,917,163'Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device'20189,911,686'Source down semiconductor devices and methods of formation thereof'20189,893,178'Semiconductor device having a channel separation trench'20189,893,158'Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device'20189,882,555'Switch device'20189,859,418'Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit'20189,853,637Dual gate switch device20179,852,945Method of manufacturing a semiconductor device having a cell field portion and a contact area20179,825,148'Semiconductor device comprising an isolation trench'20179,825,170'Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device'20179,806,188'Method for producing a controllable semiconductor component having trenches with different widths and depths'20179,799,762'Semiconductor device and method of manufacturing a semiconductor device'20179,748,378'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20179,735,243'Semiconductor device, integrated circuit and method of forming a semiconductor device'20179,728,580'Power transistor with integrated temperature sensor element, power transistor circuit, method for operating a power transistor, and method for operating a power transistor circuit'20179,705,026'Method of triggering avalanche breakdown in a semiconductor device'20179,673,320'Transistor with improved avalanche breakdown behavior'20179,660,055'Method of manufacturing a semiconductor device with lateral FET cells and field plates'20179,661,707'Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit'20179,634,101'Semiconductor component with a monocrystalline semiconductor region arranged in a via region'20179,620,637'Semiconductor device comprising a gate electrode connected to a source terminal'20179,614,032'Semiconductor device, integrated circuit and method for manufacturing the semiconductor device'20179,614,064'Semiconductor device and integrated circuit'20179,608,070'Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device'20179,570,576'Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation'20179,558,933'Method for forming a semiconductor device'20179,530,884'Method of manufacturing a semiconductor device and semiconductor device'20169,502,421'Semiconductor device and method for fabricating a semiconductor device'20169,461,004'Semiconductor workpiece having a semiconductor substrate with at least two chip areas'20169,450,085'Semiconductor device and method for producing a semiconductor device'20169,419,130'Semiconductor device and integrated circuit'20169,401,399'Semiconductor device'20169,401,355'Semiconductor device including a diode arranged in a trench'20169,396,997'Method for producing a semiconductor component with insulated semiconductor mesas'20169,397,092'Semiconductor device in a semiconductor substrate and method of manufacturing a semiconductor device in a semiconductor substrate'20169,368,436'Source down semiconductor devices and methods of formation thereof'20169,362,371'Method for producing a controllable semiconductor component having a plurality of trenches'20169,356,148'Fin-type semiconductor device and manufacturing method'20169,349,834'Method of manufacturing a semiconductor device'20169,351,382'Device having a plurality of driver circuits to provide a current to a plurality of loads and method of manufacturing the same'20169,324,829'Method of forming a trench electrode device with wider and narrower regions'20169,306,058'Integrated circuit and method of manufacturing an integrated circuit'20169,299,829'Vertical transistor component'20169,287,404'Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates'20169,281,359'Semiconductor device comprising contact trenches'20169,275,895'Semiconductor component and methods for producing a semiconductor component'20169,269,592'Method of manufacturing a semiconductor device'20169,263,619'Semiconductor component and method of triggering avalanche breakdown'20169,246,410'Integrated power semiconductor component, production method and chopper circuit comprising integrated semiconductor component'20169,231,100'Semiconductor device and method for manufacturing a semiconductor device'20169,218,958'Method for forming a semiconductor device'20159,162,868'MEMS device'20159,148,923'Device having a plurality of driver circuits to provide a current to a plurality of loads and method of manufacturing the same'20159,142,665'Semiconductor component with a semiconductor via'20159,129,820'Integrated circuit and method of manufacturing an integrated circuit'20159,123,559'Method for producing a semiconductor component'20159,123,801'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20159,111,764'Integrated semiconductor device and a bridge circuit with the integrated semiconductor device'20159,112,053'Method for producing a semiconductor device including a dielectric layer'20159,102,923'Photobioreactor'20159,087,829'Semiconductor arrangement'20159,082,773'Integrated circuit, semiconductor device and method of manufacturing a semiconductor device'20159,076,805'Current sense transistor with embedding of sense transistor cells'20159,070,741'Method of manufacturing a semiconductor device and a semiconductor workpiece'20159,059,256'Method for producing a controllable semiconductor component'20159,054,181'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20159,029,941'Vertical transistor component'20159,006,811'Semiconductor device including a fin and a drain extension region and manufacturing method'20158,999,783'Method for producing a semiconductor device with a vertical dielectric layer'20158,994,113'Semiconductor device and method of manufacturing a semiconductor device'20158,963,244'Semiconductor device, integrated circuit and method of manufacturing a semiconductor device'20158,941,206'Semiconductor device including a diode and method of manufacturing a semiconductor device'20158,940,518'Photobioreactor'20158,941,217'Semiconductor device having a through contact'20158,916,909'Semiconductor device and method for fabricating a semiconductor device'20148,871,573'Method for forming a semiconductor device'20148,860,126'Semiconductor device with a low ohmic current path'20148,860,136'Semiconductor device and method of manufacturing a semiconductor device'20148,847,311'Semiconductor device and method of manufacturing a semiconductor device'20148,735,289'Method of contacting a doping region in a semiconductor substrate'20148,735,262'Semiconductor device having a through contact and a manufacturing method therefor'20148,710,575'Semiconductor device, integrated circuit and method of manufacturing an integrated circuit'20148,704,269'Die package'20148,692,319'Lateral trench MESFET'20148,638,133'Method and circuit for driving an electronic switch'20148,637,924'Lateral trench MESFET'20148,637,378'Semiconductor component and methods for producing a semiconductor component'20148,546,875'Vertical transistor having edge termination structure'20138,519,473'Vertical transistor component'20138,476,734'Semiconductor component and methods for producing a semiconductor component'20138,404,557'Method for forming a semiconductor device and a semiconductor device'20138,373,449'Circuit arrangement including a common source sense-FET'20138,368,177'Integrated circuit with ESD structure'20137,982,284'Semiconductor component including an isolation structure and a contact to the substrate'20117,804,135'Integrated semiconductor diode arrangement and integrated semiconductor component'20107,470,396'Device and method for establishing an artificial isolated circulation in a target area of a human or animal body'20087,468,307'Semiconductor structure and method'20087,116,583'Electrically programmable memory cell and methods for programming and reading from such a memory cell'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2021Patents assigned to INFINEON TECHNOLOGIES AG (103)· patent assignee history
2008–2016Based in Unterhaching, DE· patent location history
2008Based in Bochum, DE· patent location history
2010Based in München, DE· patent location history
2013–2016Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (17)· patent assignee history
2013–2017Patents assigned to MEISER ANDREAS (16)· patent assignee history
2013–2017Patents assigned to HIRLER FRANZ (13)· patent assignee history
2013–2021Based in Sauerlach, DE· patent location history
2015Based in Stuttgart, DE· patent location history
2016–2021Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (16)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 103 | 2008–2021 |
| INFINEON TECHNOLOGIES AUSTRIA | 17 | 2013–2016 |
| INFINEON TECHNOLOGIES AUSTRIA AG | 16 | 2016–2021 |
| MEISER ANDREASself | 16 | 2013–2017 |
| HIRLER FRANZ | 13 | 2013–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sauerlach, DE | 134 | 2013–2021 |
| Unterhaching, DE | 7 | 2008–2016 |
| Stuttgart, DE | 2 | 2015 |
| München, DE | 1 | 2010 |
| Bochum, DE | 1 | 2008 |