Inventor

Takatoshi Tsujimura

Inventor

Fujisawa, JP

Overview

1995–2018

Patent span

Electricity

Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices30%

H10KOrganic electric solid-state devices16%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein14%

G09GArrangements or circuits for control of indicating devices using static means to present variable information6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

H01LSemiconductor devices5%

Y10TTechnical subjects covered by former us classification5%

C23CCoating metallic material4%

H05BElectric heating3%

H01BCables2%

PatentTitleYear

9,947,889Transparent electrode, electronic device, and organic electroluminescent element2018 9,923,166'Transparent electrode and electronic device'2018 9,876,189Transparent electrode, electronic device, and transparent electrode manufacturing method2018 9,299,960'Electronic device manufacturing apparatus'2016 9,287,521'Transparent electrode, method for manufacturing transparent electrode, electronic device, and organic electroluminescence element'2016 8,514,155'Display unit, drive circuit, amorphous silicon thin-film transistor, and method of driving OLED'2013 7,738,056'Liquid crystal display panel and device thereof'2010 7,612,499'Image display'2009 7,592,275'Method and apparatus for manufacturing active matrix device including top gate type TFT'2009 7,569,858'Thin film transistor in which fluctuations in current flowing therethrough are suppressed, and image display apparatus'2009 7,561,228'Liquid crystal display panel and device thereof'2009 7,450,195'Liquid crystal display panel and device thereof'2008 7,432,650'EL display and production method thereof'2008 7,422,770'Forming a thin film structure'2008 7,355,662'Liquid crystal display panel and device thereof'2008 7,348,944'Image display device'2008 7,344,927'Method and apparatus for manufacturing active matrix device including top gate type TFT'2008 7,259,737'Image display apparatus controlling brightness of current-controlled light emitting element'2007 7,227,304'Image display apparatus'2007 7,221,089'Organic light emitting diode display device and method of manufacturing the same'2007 7,182,663'Method of manufacturing an organic light-emitting display apparatus having a diamond-like carbon film in contact wiring'2007 7,176,620'Organic light-emitting device, organic light-emitting display apparatus, and method of manufacturing organic light-emitting display apparatus'2007 7,173,278'Thin-film transistor in which fluctuations in current flowing therethrough are suppressed, and image display apparatus'2007 7,115,448'Thin film transistor, liquid crystal display device and method of fabricating the thin film transistor'2006 7,102,202'Display unit, drive circuit, amorphous silicon thin-film transistor, and method of driving OLED'2006 7,091,940'Organic light-emitting diode display'2006 7,038,278'Thin film transistor, image display device, and image display apparatus'2006 7,037,769'Thin film transistor and multilayer film structure and manufacturing method of same'2006 7,002,181'Thin film transistor and use of same'2006 6,859,252'Active matrix substrate and manufacturing method thereof'2005 6,816,209'Thin film transistor, liquid crystal display panel, and method of manufacturing thin film transistor'2004 6,815,270'Thin film transistor formed by an etching process with high anisotropy'2004 6,801,266'Thin film transistor, liquid crystal display panel, and method of manufacturing thin film transistor'2004 6,791,144'Thin film transistor and multilayer film structure and manufacturing method of same'2004 6,767,828'Method for forming patterns for semiconductor devices'2004 6,753,550'Liquid crystal display device having a thin film transistor element including an amorphous film containing a low-defect density layer and a high-defect densisty layer'2004 6,734,505'Thin film transistor and use of same'2004 6,727,645'Organic LED device'2004 6,713,786'Thin film transistors with self-aligned transparent pixel electrode'2004 6,707,513'Active matrix substrate and manufacturing method thereof'2004 6,693,297'Thin film transistor formed by an etching process with high anisotropy'2004 6,689,629'Array substrate for display, method of manufacturing array substrate for display and display device using the array substrate'2004 6,661,564'Electronic apparatus and electronic apparatus information display method'2003 6,653,178'Thin film transistor and method for manufacturing the same'2003 6,632,115'Method for forming transparent conductive film using chemically amplified resist'2003 6,608,658'Top gate TFT structure having light shielding layer and method to fabricate the same'2003 6,600,196'Thin film transistor, and manufacturing method thereof'2003 6,576,925'Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor'2003 6,566,687'Metal induced self-aligned crystallization of Si layer for TFT'2003 6,556,271'LCD having color filters on TFT substrate wherein transparent conductive film is patterned using back exposure with UV light filtered to remove wavelengths above 365 nm'2003 6,525,341'Thin film transistor, liquid crystal display device and method of fabricating the thin film transistor'2003 6,511,869'Thin film transistors with self-aligned transparent pixel electrode'2003 6,436,742'Method for fabricating a thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect'2002 6,391,691'Method of fabricating a thin film transistor with metal source and drain electrodes by diffusing impurities from a semiconductor layer'2002 6,271,540'Thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect and a method for fabricating the same'2001 5,464,500'Method for taper etching metal'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2013Patents assigned to IBM (34)· patent assignee history

1995Based in Tokyo, JP· patent location history

2001–2018Based in Fujisawa, JP· patent location history

2003–2009Based in Kanagawa, JP· patent location history

2006–2009Patents assigned to KYOCERA CORP (9)· patent assignee history

2006–2009Patents assigned to AU OPTRONICS CORP (3)· patent assignee history

2006–2007Based in Shiga, JP· patent location history

2007–2009Patents assigned to CHI MEI OPTOELECTRONICS CORP (5)· patent assignee history

2016–2018Patents assigned to KONICA MINOLTA INC (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	34	1995–2013
KYOCERA CORP	9	2006–2009
CHI MEI OPTOELECTRONICS CORP	5	2007–2009
KONICA MINOLTA INC	5	2016–2018
AU OPTRONICS CORP	3	2006–2009

Locations

Location	Patents	Span
Fujisawa, JP	43	2001–2018
Kanagawa, JP	9	2003–2009
Shiga, JP	3	2006–2007
Tokyo, JP	1	1995