Inventor
Arun Madan
Inventor
Golden, CO, US
Overview
21→
Patents
1980–2002
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation21%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution21%
Y02PClimate change mitigation technologies in the production or processing of goods16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
C23CCoating metallic material12%
H10DInorganic electric semiconductor devices8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
G03GElectrography1%
Y10TTechnical subjects covered by former us classification1%
PatentTitleYear
6,488,777'Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette'20026,427,622'Hot wire chemical vapor deposition method and apparatus using graphite hot rods'20026,258,408'Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette'20016,214,706'Hot wire chemical vapor deposition method and apparatus using graphite hot rods'20015,252,140'Solar cell substrate and process for its production'19935,016,562'Modular continuous vapor deposition system'19914,865,999'Solar cell fabrication method'19894,839,312'Fluorinated precursors from which to fabricate amorphous semiconductor material'19894,808,462'Solar cell substrate'19894,763,602'Thin film deposition apparatus including a vacuum transport mechanism'19884,710,786'Wide band gap semiconductor alloy material'19874,703,336'Photodetection and current control devices'19874,520,380'Amorphous semiconductors equivalent to crystalline semiconductors'19854,469,715'P-type semiconductor material having a wide band gap'19844,441,113'P-Type semiconductor material having a wide band gap'19844,415,760'Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region'19834,409,605'Amorphous semiconductors equivalent to crystalline semiconductors'19834,398,054'Compensated amorphous silicon solar cell incorporating an insulating layer'19834,396,793'Compensated amorphous silicon solar cell'19834,379,943'Current enhanced photovoltaic device'19834,226,898'Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1980–1989Patents assigned to ENERGY CONVERSION DEVICES INC (7)· patent assignee history
1980Based in Rochester, MI, US· patent location history
1983Patents assigned to CHEVRON RES (3)· patent assignee history
1983–1989Based in Birmingham, MI, US· patent location history
1983Based in Moraga, CA, US· patent location history
1987–2002Patents assigned to MADAN ARUN (4)· patent assignee history
1988–1991Patents assigned to GLASSTECH SOLAR INC (4)· patent assignee history
1988–2002Based in Golden, CO, US· patent location history
2001–2002Patents assigned to MV SYSTEMS INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ENERGY CONVERSION DEVICES INC | 7 | 1980–1989 |
| GLASSTECH SOLAR INC | 4 | 1988–1991 |
| MADAN ARUNself | 4 | 1987–2002 |
| CHEVRON RES | 3 | 1983 |
| MV SYSTEMS INC | 2 | 2001–2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Golden, CO, US | 9 | 1988–2002 |
| Birmingham, MI, US | 8 | 1983–1989 |
| Moraga, California, US | 3 | 1983 |
| Rochester, MI, US | 1 | 1980 |