Inventor

Louis C. Parrillo

Inventor
Austin, TX, US

Overview

34→
Patents
1984–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 34 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10BElectronic memory devices7%
H10NElectric solid-state devices not otherwise provided for6%
H01LSemiconductor devices5%
A47GHousehold or table equipment2%
G01CMeasuring distances, levels or bearings2%
B23DPlaning1%
PatentTitleYear
10,529,778Vertical cross-point memory arrays202010,448,763Systems and methods for a frame hanging device201910,050,086Vertical cross-point memory arrays20189,549,624'Systems and methods for a frame hanging device'20179,419,217'Vertical cross-point memory arrays'20169,029,827'Planar resistive memory integration'20158,610,099'Planar resistive memory integration'20135,527,739'Process for fabricating a semiconductor device having an improved metal interconnect structure'19965,442,235'Semiconductor device having an improved metal interconnect structure'19955,442,553'Wireless motor vehicle diagnostic and software upgrade system'19955,208,168'Semiconductor device having punch-through protected buried contacts and method for making the same'19934,951,100'Hot electron collector for a LDD transistor'19904,929,565'High/low doping profile for twin well process'19904,889,825'High/low doping profile for twin well process'19894,812,418'Micron and submicron patterning without using a lithographic mask having submicron dimensions'19894,808,543'Well Extensions for trench devices'19894,808,555'Multiple step formation of conductive material layers'19894,801,555'Double-implant process for forming graded source/drain regions'19894,769,747'Illuminated paper cutter'19884,766,090'Methods for fabricating latchup-preventing CMOS device'19884,762,802'Method for preventing latchup in CMOS devices'19884,753,898'LDD CMOS process'19884,745,086'Removable sidewall spacer for lightly doped drain formation using one mask level and differential oxidation'19884,722,909'Removable sidewall spacer for lightly doped drain formation using two mask levels'19884,717,683'CMOS process'19884,686,552'Integrated circuit trench cell'19874,656,730'Method for fabricating CMOS devices'19874,647,957'Latchup-preventing CMOS device'19874,646,123'Latchup-preventing CMOS device'19874,623,912'Nitrided silicon dioxide layers for semiconductor integrated circuits'19864,569,722'Ethylene glycol etch for processes using metal silicides'19864,554,726'CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well'19854,435,895'Process for forming complementary integrated circuit devices'19844,435,896'Method for fabricating complementary field effect transistor devices'1984

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1984–1988Based in Warren, NJ, US· patent location history
1985–1987Patents assigned to AT & T BELL LAB (5)· patent assignee history
1987–1996Patents assigned to MOTOROLA INC (16)· patent assignee history
1987–1988Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (3)· patent assignee history
1987–2020Based in Austin, TX, US· patent location history
2013–2020Patents assigned to UNITY SEMICONDUCTOR CORP (5)· patent assignee history
2013–2016Patents assigned to BATEMAN BRUCE (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MOTOROLA INC161987–1996
AT & T BELL LAB51985–1987
UNITY SEMICONDUCTOR CORP52013–2020
AMERICAN TELEPHONE & TELEGRAPH31987–1988
BATEMAN BRUCE22013–2016
Locations
LocationPatentsSpan
Austin, Texas, US241987–2020
Warren, New Jersey, US101984–1988