Inventor
Yihwan Kim
Inventor
Milpitas, CA, US
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices12%
C23CCoating metallic material10%
C30BSingle-crystal growth10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
Y10TTechnical subjects covered by former us classification4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
B05DProcesses for applying fluent materials to surfaces, in general1%
H01JElectric discharge tubes or discharge lamps1%
PatentTitleYear
10,731,272Methods and apparatus for deposition processes202010,692,993Semiconductor device and method for manufacturing the same202010,304,834Semiconductor devices and method of fabricating the same201910,260,164Methods and apparatus for deposition processes201910,208,401Substrate treating apparatus20199,805,942'Method of modifying epitaxial growth shape on source drain area of transistor'20179,721,792'Method of forming strain-relaxed buffer layers'20179,704,708'Halogenated dopant precursors for epitaxy'20179,673,277'Methods and apparatus for forming horizontal gate all around device structures'20179,650,726'Methods and apparatus for deposition processes'20179,530,661'Method of modifying epitaxial growth shape on source drain area of transistor'20169,460,918'Epitaxy of high tensile silicon alloy for tensile strain applications'20169,200,367'Method and apparatus for gas delivery'20159,064,960'Selective epitaxy process control'20159,058,988'Methods for depositing layers having reduced interfacial contamination'20159,012,328'Carbon addition for low resistivity in situ doped silicon epitaxy'20158,999,821'Fin formation by epitaxial deposition'20158,927,066'Method and apparatus for gas delivery'20158,728,944'Method of removing contaminants and native oxides from a substrate surface'20148,652,945'Epitaxy of high tensile silicon alloy for tensile strain applications'20148,652,951'Selective epitaxial germanium growth on silicon-trench fill and in situ doping'20148,586,456'Use of CL2 and/or HCL during silicon epitaxial film formation'20138,394,196'Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon'20138,207,023'Methods of selectively depositing an epitaxial layer'20128,029,620'Methods of forming carbon-containing silicon epitaxial layers'20117,960,256'Use of CL2 and/or HCL during silicon epitaxial film formation'20117,960,236'Phosphorus containing Si epitaxial layers in N-type source/drain junctions'20117,897,495'Formation of epitaxial layer containing silicon and carbon'20117,837,790'Formation and treatment of epitaxial layer containing silicon and carbon'20107,776,698'Selective formation of silicon carbon epitaxial layer'20107,772,074'Method of forming conformal silicon layer for recessed source-drain'20107,741,200'Formation and treatment of epitaxial layer containing silicon and carbon'20107,737,007'Methods to fabricate MOSFET devices using a selective deposition process'20107,732,269'Method of ultra-shallow junction formation using Si film alloyed with carbon'20107,732,305'Use of Cl2 and/or HCl during silicon epitaxial film formation'20107,700,424'Method of forming an embedded silicon carbon epitaxial layer'20107,682,940'Use of Cl2 and/or HCl during silicon epitaxial film formation'20107,674,337'Gas manifolds for use during epitaxial film formation'20107,651,948'Pre-cleaning of substrates in epitaxy chambers'20107,598,178'Carbon precursors for use during silicon epitaxial film formation'20097,588,980'Methods of controlling morphology during epitaxial layer formation'20097,572,715'Selective epitaxy process with alternating gas supply'20097,560,352'Selective deposition'20097,521,365'Selective epitaxy process with alternating gas supply'20097,517,775'Methods of selective deposition of heavily doped epitaxial SiGe'20097,494,545'Epitaxial deposition process and apparatus'20097,439,142'Methods to fabricate MOSFET devices using a selective deposition process'20087,312,128'Selective epitaxy process with alternating gas supply'20077,166,528'Methods of selective deposition of heavily doped epitaxial SiGe'20077,132,338'Methods to fabricate MOSFET devices using selective deposition process'20066,563,144'Process for growing epitaxial gallium nitride and composite wafers'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003Based in San Mateo, CA, US· patent location history
2006–2020Patents assigned to APPLIED MATERIALS INC (46)· patent assignee history
2006–2020Based in Milpitas, CA, US· patent location history
2012–2017Patents assigned to KIM YIHWAN (11)· patent assignee history
2012–2017Patents assigned to YE ZHIYUAN (7)· patent assignee history
2012–2015Patents assigned to CHOPRA SAURABH (3)· patent assignee history
2012–2017Based in San Jose, CA, US· patent location history
2019–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (3)· patent assignee history
2019–2020Based in Seongnam-si, KR· patent location history
2019Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 46 | 2006–2020 |
| KIM YIHWANself | 11 | 2012–2017 |
| YE ZHIYUAN | 7 | 2012–2017 |
| CHOPRA SAURABH | 3 | 2012–2015 |
| SAMSUNG ELECTRONICS CO LTD | 3 | 2019–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Milpitas, California, US | 33 | 2006–2020 |
| San Jose, California, US | 14 | 2012–2017 |
| Seongnam-si, KR | 2 | 2019–2020 |
| Yongin-si, KR | 1 | 2019 |
| San Mateo, California, US | 1 | 2003 |