Inventor
Steven P. DenBaars
Inventor
Goleta, CA, US
Overview
Patents· 192 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%
C30BSingle-crystal growth8%
H01LSemiconductor devices7%
B82YSpecific uses or applications of nanostructures7%
H10DInorganic electric semiconductor devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
G02BOptical elements, systems or apparatus2%
PatentTitleYear
11,125,415Infrared illumination device configured with a gallium and nitrogen containing laser source202110,985,285Methods for fabricating III-nitride tunnel junction devices202110,718,491Infrared illumination device configured with a gallium and nitrogen containing laser source202010,685,835III-nitride tunnel junction with modified P-N interface202010,658,557Transparent light emitting device with light emitting diodes202010,644,213Filament LED light bulb202010,593,854Transparent light emitting device with light emitting diodes202010,529,892Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices202010,523,180Method and structure for single crystal acoustic resonator devices using thermal recrystallization201910,495,268High intensity solid state white emitter which is laser driven and uses single crystal, ceramic or polycrystalline phosphors201910,454,010Transparent light emitting diodes201910,297,721Multistep deposition of zinc oxide on gallium nitride201910,217,916Transparent light emitting diodes201910,205,300Gallium and nitrogen containing laser diode dazzling devices and methods of use20199,951,912Tunable white light based on polarization sensitive light-emitting diodes20189,935,243Multistep deposition of zinc oxide on gallium nitride20189,927,076'Laser-driven white lighting system for high-brightness applications'20189,917,422'Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction'20189,893,236'Non-polar (Al,B,In,Ga)N quantum wells'20189,859,464'Lighting emitting diode with light extracted from front and back sides of a lead frame'20189,828,695Planar nonpolar group-III nitride films grown on miscut substrates20179,793,435'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20179,773,704'Method for the reuse of gallium nitride epitaxial substrates'20179,653,655'Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution'20179,640,947'Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser'20179,611,987'White light source employing a III-nitride based laser diode pumping a phosphor'20179,574,728'Laser-driven white lighting system for high-brightness applications'20179,515,240'Optical designs for high-efficacy white-light emitting diodes'20169,396,943'Method for the reuse of gallium nitride epitaxial substrates'20169,356,431'High power blue-violet III-nitride semipolar laser diodes'20169,340,899'Planar nonpolar group-III nitride films grown on miscut substrates'20169,250,044'Gallium and nitrogen containing laser diode dazzling devices and methods of use'20169,240,529'Textured phosphor conversion layer light emitting diode'20169,231,376'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20169,219,205'Optical designs for high-efficacy white-light emitting diodes'20159,159,553'Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface'20159,147,733'Method for the reuse of gallium nitride epitaxial substrates'20159,136,673'Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser'20159,130,119'Non-polar and semi-polar light emitting devices'20159,077,151'Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction'20159,076,927'(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers'20159,054,498'(Al,Ga,In)N diode laser fabricated at reduced temperature'20159,040,327'Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes'20159,040,326'High light extraction efficiency nitride based light emitting diode by surface roughening'20158,956,896'Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices'20158,882,935'Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition'20148,866,126'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20148,866,149'Method for the reuse of gallium nitride epitaxial substrates'20148,860,051'Textured phosphor conversion layer light emitting diode'20148,853,669'Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning'20148,841,691'Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays'20148,835,200'High light extraction efficiency nitride based light emitting diode by surface roughening'20148,835,959'Transparent light emitting diodes'20148,829,546'Rare earth doped layer or substrate for light conversion'20148,809,867'Dislocation reduction in non-polar III-nitride thin films'20148,795,430'Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates'20148,795,440'Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)'20148,791,000'Planar nonpolar group-III nitride films grown on miscut substrates'20148,790,943'(Al,Ga,In)N diode laser fabricated at reduced temperature'20148,772,792'LED with surface roughening'20148,772,758'Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N'20148,761,218'Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes'20148,729,671'Method for increasing the area of non-polar and semi-polar nitride substrates'20148,709,925'Method for conductivity control of (Al,In,Ga,B)N'20148,691,671'Planar nonpolar group-III nitride films grown on miscut substrates'20148,692,105'III-V nitride-based thermoelectric device'20148,686,466'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20148,686,397'Low droop light emitting diode structure on gallium nitride semipolar substrates'20148,679,876'Laser diode and method for fabricating same'20148,674,375'Roughened high refractive index layer/LED for high light extraction'20148,653,503'Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys'20148,647,967'Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same'20148,643,024'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20148,637,334'High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution'20148,624,281'Optical designs for high-efficacy white-light emitting diodes'20148,592,802'(Al, In, Ga, B)N device structures on a patterned substrate'20138,541,869'Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates'20138,541,788'LED with current confinement structure and surface roughening'20138,535,565'Solid solution phosphors based on oxyfluoride and white light emitting diodes including the phosphors for solid state white lighting applications'20138,536,618'Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays'20138,524,012'Technique for the growth of planar semi-polar gallium nitride'20138,502,246'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20138,481,991'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20138,450,192'Growth of planar, non-polar, group-III nitride films'20138,410,499'LED with a current confinement structure aligned with a contact'20138,410,490'LED with current confinement structure and surface roughening'20138,405,128'Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20138,390,011'Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate'20138,372,204'Susceptor for MOCVD reactor'20138,368,109'Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency'20138,368,179'Miscut semipolar optoelectronic device'20138,366,830'Susceptor apparatus for inverted type MOCVD reactor'20138,357,925'Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys'20138,344,611'Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications'20138,334,151'Method for fabricating a direct wafer bonded optoelectronic device'20128,299,452'Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes'20128,294,166'Transparent light emitting diodes'20128,278,128'Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut'20128,263,500'Photoelectrochemical etching for laser facets'20128,254,423'(Al,Ga,In)N diode laser fabricated at reduced temperature'20128,227,819'Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes'20128,211,723'Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes'20128,203,159'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20128,193,079'Method for conductivity control of (Al,In,Ga,B)N'20128,188,458'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20128,183,557'(Al,In,Ga,B)N device structures on a patterned substrate'20128,178,373'Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices'20128,163,203'Yellow emitting phosphors based on Ce3+-doped aluminate and via solid solution for solid-state lighting applications'20128,158,497'Planar nonpolar m-plane group III nitride films grown on miscut substrates'20128,148,713'Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes'20128,133,322'Apparatus for inverted multi-wafer MOCVD fabrication'20128,128,756'Technique for the growth of planar semi-polar gallium nitride'20128,124,991'Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency'20128,114,698'High light extraction efficiency nitride based light emitting diode by surface roughening'20128,110,482'Miscut semipolar optoelectronic device'20128,105,919'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20128,097,481'Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)'20128,084,763'Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys'20118,080,469'Method for increasing the area of non-polar and semi-polar nitride substrates'20118,053,264'Photoelectrochemical etching of P-type semiconductor heterostructures'20118,050,304'Group-III nitride based laser diode and method for fabricating same'20118,044,383'Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes'20118,044,417'Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation'20118,035,117'Multi element, multi color solid state LED/laser'20118,022,423'Standing transparent mirrorless light emitting diode'20117,994,527'High light extraction efficiency light emitting diode (LED)'20117,982,208'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20117,977,694'High light extraction efficiency light emitting diode (LED) with emitters within structured materials'20117,955,983'Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)'20117,956,360'Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy'20117,956,371'High efficiency light emitting diode (LED)'20117,868,341'Optical designs for high-efficacy white-light emitting diodes'20117,858,996'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20107,847,293'Growth of reduced dislocation density non-polar gallium nitride'20107,846,757'Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices'20107,842,527'Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices'20107,839,903'Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers'20107,825,006'Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method'20107,813,400'Group-III nitride based laser diode and method for fabricating same'20107,781,789'Transparent mirrorless light emitting diode'20107,776,629'High efficiency light emitting diode (LED) with optimized photonic crystal extractor'20107,769,066'Laser diode and method for fabricating same'20107,755,096'Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate'20107,723,216'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20107,723,746'Packaging technique for the fabrication of polarized light emitting diodes'20107,723,745'Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate'20107,719,020'(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method'20107,709,284'Method for deposition of magnesium doped (Al, In, Ga, B)N layers'20107,704,331'Technique for the growth of planar semi-polar gallium nitride'20107,691,658'Method for improved growth of semipolar (Al,In,Ga,B)N'20107,687,293'Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20107,687,813'Standing transparent mirrorless light emitting diode'20107,682,944'Pendeo epitaxial structures and devices'20107,582,910'High efficiency light emitting diode (LED) with optimized photonic crystal extractor'20097,575,947'Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20097,518,159'Packaging technique for the fabrication of polarized light emitting diodes'20097,504,274'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20097,427,555'Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy'20087,361,576'Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)'20087,344,958'Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications'20087,345,298'Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate'20087,338,828'Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)'20087,335,920'LED with current confinement structure and surface roughening'20087,332,365'Method for fabricating group-III nitride devices and devices fabricated using method'20087,291,864'Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate'20077,223,998'White, single or multi-color light emitting diodes by recycling guided modes'20077,220,324'Technique for the growth of planar semi-polar gallium nitride'20077,220,658'Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy'20077,208,393'Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy'20077,202,506'Multi element, multi color solid state LED/laser'20077,186,302'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20077,122,844'Susceptor for MOCVD reactor'20067,091,514'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20067,084,436'Multi element, multi color solid state LED/laser'20066,900,070'Dislocation reduction in non-polar gallium nitride thin films'20056,821,804'Enhanced light extraction in LEDs through the use of internal and external optical elements'20046,657,236'Enhanced light extraction in LEDs through the use of internal and external optical elements'20036,410,942'Enhanced light extraction through the use of micro-LED arrays'20026,261,931'High quality, semi-insulating gallium nitride and method and system for forming same'20015,985,687'Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials'19995,966,393'Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications'1999RE036295'Apparatus for growing metal oxides using organometallic vapor phase epitaxy'19995,891,790'Method for the growth of P-type gallium nitride and its alloys'19995,877,038'Method of making a vertical cavity laser'19995,798,555'Enhancement-depletion logic based on Ge mosfets'19985,795,798'Method of making full color monolithic gan based leds'19985,796,771'Miniature self-pumped monolithically integrated solid state laser'19985,780,922'Ultra-low phase noise GE MOSFETs'19985,780,355'UV assisted gallium nitride growth'19985,747,838'Ultra-low phase noise GaAs MOSFETs'19985,650,198'Defect reduction in the growth of group III nitrides'19975,458,086'Apparatus for growing metal oxides using organometallic vapor phase epitaxy'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2021Based in Goleta, CA, US· patent location history
1997–2021Patents assigned to UNIV CALIFORNIA (160)· patent assignee history
1998Based in Santa Barbara, CA, US· patent location history
2007–2020Patents assigned to JAPAN SCIENCE & TECH AGENCY (35)· patent assignee history
2009Based in Golera, CA, US· patent location history
2011–2017Patents assigned to DENBAARS STEVEN P (69)· patent assignee history
2011–2015Patents assigned to NAKAMURA SHUJI (62)· patent assignee history
2011–2015Patents assigned to SPECK JAMES S (40)· patent assignee history
2016–2019Based in Fremont, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CALIFORNIA | 160 | 1997–2021 |
| DENBAARS STEVEN Pself | 69 | 2011–2017 |
| NAKAMURA SHUJI | 62 | 2011–2015 |
| SPECK JAMES S | 40 | 2011–2015 |
| JAPAN SCIENCE & TECH AGENCY | 35 | 2007–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Goleta, California, US | 188 | 1995–2021 |
| Fremont, California, US | 2 | 2016–2019 |
| Golera, California, US | 1 | 2009 |
| Santa Barbara, California, US | 1 | 1998 |