Inventor
Yun-sung Woo
Inventor
Yongin-si, KR
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices14%
H01LSemiconductor devices13%
B82YSpecific uses or applications of nanostructures11%
C01BNon-metallic elements10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H01BCables6%
C23CCoating metallic material4%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
10,723,620Direct graphene growing method202010,668,702Conductive films and electronic devices including the same202010,615,356Electric device with quantum dot emissive layer, and display device comprising the same202010,002,927Transparent electrodes and electronic devices including the same20189,899,209'Electrically conductive thin films'20189,892,821'Electrical conductors and electronic devices including the same'20189,755,179'Conductor and method of manufacturing the same'20179,544,999'Transparent electrodes and electronic devices including the same'20179,376,321'Method and apparatus for manufacturing a nanowire'20169,373,685'Graphene device and electronic apparatus'20169,359,211'Methods of fabricating graphene using alloy catalyst'20169,324,805'Flexible graphene switching device'20169,108,848'Methods of manufacturing and transferring larger-sized graphene'20159,053,932'Methods of preparing graphene and device including graphene'20159,023,221'Method of forming multi-layer graphene'20158,999,201'Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same'20158,890,171'Method of fabricating single-layer graphene'20148,664,439'Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same'20148,513,653'Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same'20138,487,356'Graphene device and method of manufacturing the same'20138,421,131'Graphene electronic device and method of fabricating the same'20138,159,037'Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure'20128,101,980'Graphene device and method of manufacturing the same'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (22)· patent assignee history
2012–2016Patents assigned to WOO YUN-SUNG (10)· patent assignee history
2012–2016Patents assigned to CHUNG HYUN-JONG (8)· patent assignee history
2012–2016Patents assigned to SEO SUN-AE (8)· patent assignee history
2012–2016Patents assigned to HEO JIN-SEONG (5)· patent assignee history
2012–2016Based in Suwon-si, KR· patent location history
2014–2020Based in Yongin-si, KR· patent location history
2016Based in Pohang-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 22 | 2012–2020 |
| WOO YUN-SUNGself | 10 | 2012–2016 |
| CHUNG HYUN-JONG | 8 | 2012–2016 |
| SEO SUN-AE | 8 | 2012–2016 |
| HEO JIN-SEONG | 5 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 12 | 2014–2020 |
| Suwon-si, KR | 10 | 2012–2016 |
| Pohang-si, KR | 1 | 2016 |