Inventor

Ziwei Fang

Inventor

Hsinchu, TW

Overview

2001–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 83 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%

H01LSemiconductor devices26%

H10DInorganic electric semiconductor devices26%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H01JElectric discharge tubes or discharge lamps6%

C23CCoating metallic material1%

B82YSpecific uses or applications of nanostructures1%

A61BDiagnosis0%

G01NInvestigating or analysing materials by determining their chemical or physical properties0%

H10BElectronic memory devices0%

PatentTitleYear

10,879,246Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers2020 10,872,970Source and drain formation technique for fin-like field effect transistor2020 10,868,151Conformal transfer doping method for fin-like field effect transistor2020 10,868,140Gap-filling germanium through selective bottom-up growth2020 10,868,171Semiconductor device structure with gate dielectric layer and method for forming the same2020 10,861,751Method of semiconductor integrated circuit fabrication2020 10,854,729Method to reduce etch variation using ion implantation2020 10,854,503Semiconductor structure with air gap and method sealing the air gap2020 10,847,431Ion implantation methods and structures thereof2020 10,818,768Method for forming metal cap layers to improve performance of semiconductor structure2020 10,811,253Methods of fabricating semiconductor devices having crystalline high-K gate dielectric layer2020 10,770,563Gate structure and patterning method for multiple threshold voltages2020 10,749,008Gate structure, semiconductor device and the method of forming semiconductor device2020 10,720,431Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers2020 10,720,529Source/drain junction formation2020 10,707,320Field effect transistors with ferroelectric dielectric materials2020 10,685,867Method of semiconductor integrated circuit fabrication2020 10,686,074Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same2020 10,685,884Semiconductor device including a Fin-FET and method of manufacturing the same2020 10,665,717Semiconductor device and FinFET device2020 10,629,596Fin-type field effect transistor structure and manufacturing method thereof2020 10,573,749Fin-type field effect transistor structure and manufacturing method thereof2020 10,541,175Structure and formation method of semiconductor device with fin structures2020 10,535,557Interlayer dielectric film in semiconductor devices2020 10,515,963Field effect transistor contact with reduced contact resistance2019 10,515,809Selective high-K formation in gate-last process2019 10,490,648Method to reduce etch variation using ion implantation2019 10,483,170Method of semiconductor integrated circuit fabrication2019 10,468,501Gap-filling germanium through selective bottom-up growth2019 10,431,670Source and drain formation technique for fin-like field effect transistor2019 10,276,691Conformal transfer doping method for fin-like field effect transistor2019 10,269,799Field effect transistor contact with reduced contact resistance2019 10,249,530Interlayer dielectric film in semiconductor devices2019 10,158,019Source/drain junction formation2018 10,141,417Gate structure, semiconductor device and the method of forming semiconductor device2018 10,115,624Method of semiconductor integrated circuit fabrication2018 10,062,780FinFET device2018 10,049,918Directional patterning methods2018 10,026,811Integrated circuit structure and method with solid phase diffusion2018 10,008,497Method of manufacturing a semiconductor device and a semiconductor device2018 10,008,418Method of semiconductor integrated circuit fabrication2018 10,002,867Fin-type field effect transistor structure and manufacturing method thereof2018 9,881,840'Method of fabricating gate electrode using a treated hard mask'2018 9,865,515'Ion implantation methods and structures thereof'2018 9,812,451'Field effect transistor contact with reduced contact resistance'2017 9,748,390'Semiconductor device and method of forming the same'2017 9,722,083'Source/drain junction formation'2017 9,722,081'FinFET device and method of forming the same'2017 9,634,141'Interlayer dielectric film in semiconductor devices'2017 9,564,530'Integrated circuit structure and method with solid phase diffusion'2017 9,537,010'Semiconductor device structure and method for forming the same'2017 9,508,556'Method for fabricating fin field effect transistor and semiconductor device'2016 9,412,838'Ion implantation methods and structures thereof'2016 9,401,414'Semiconductor device and method of forming the same'2016 9,396,986'Mechanism of forming a trench structure'2016 9,373,529'Process tool having third heating source and method of using the same'2016 9,324,865'Method of forming a semiconductor device'2016 9,281,196'Method to reduce etch variation using ion implantation'2016 9,184,088'Method of making a shallow trench isolation (STI) structures'2015 8,999,794'Self-aligned source and drain structures and method of manufacturing same'2015 8,927,377'Methods for forming FinFETs with self-aligned source/drain'2015 8,927,359'Multi-composition dielectric for semiconductor device'2015 8,890,258'Semiconductor device and method of forming the same'2014 8,877,602'Mechanisms of doping oxide for forming shallow trench isolation'2014 8,877,599'Method of forming a semiconductor device'2014 8,853,025'FinFET/tri-gate channel doping for multiple threshold voltage tuning'2014 8,809,171'Methods for forming FinFETs having multiple threshold voltages'2014 8,592,915'Doped oxide for shallow trench isolation (STI)'2013 8,501,570'Method of manufacturing source/drain structures'2013 8,450,193'Techniques for temperature-controlled ion implantation'2013 7,878,145'Monitoring plasma ion implantation systems for fault detection and process control'2011 7,687,787'Profile adjustment in plasma ion implanter'2010 7,528,389'Profile adjustment in plasma ion implanter'2009 7,476,849'Technique for monitoring and controlling a plasma process'2009 7,453,059'Technique for monitoring and controlling a plasma process'2008 7,397,048'Technique for boron implantation'2008 7,396,746'Methods for stable and repeatable ion implantation'2008 6,528,805'Dose monitor for plasma doping system'2003 6,527,918'Method and apparatus for low voltage plasma doping using dual pulses'2003 6,500,496'Hollow cathode for plasma doping system'2002 6,335,536'Method and apparatus for low voltage plasma doping using dual pulses'2002 6,300,643'Dose monitor for plasma doping system'2001 6,182,604'Hollow cathode for plasma doping system'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2013Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (14)· patent assignee history

2001–2003Based in Sunnyvale, CA, US· patent location history

2008–2013Based in Beverly, MA, US· patent location history

2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (14)· patent assignee history

2013–2018Patents assigned to FANG ZIWEI (7)· patent assignee history

2013–2018Patents assigned to HUANG YU-LIEN (3)· patent assignee history

2013–2020Based in Hsinchu, TW· patent location history

2013–2020Based in Baoshan Township, TW· patent location history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (55)· patent assignee history

2017–2018Based in Hsinchu County, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	55	2016–2020
TAIWAN SEMICONDUCTOR MFG	14	2013–2016
VARIAN SEMICONDUCTOR EQUIPMENT	14	2001–2013
FANG ZIWEIself	7	2013–2018
HUANG YU-LIEN	3	2013–2018

Locations

Location	Patents	Span
Hsinchu, TW	54	2013–2020
Baoshan Township, TW	13	2013–2020
Beverly, Massachusetts, US	8	2008–2013
Sunnyvale, California, US	6	2001–2003
Hsinchu County, TW	2	2017–2018